Localized energy levels generated in Magnetic Czochralski silicon by proton irradiation and their influence on the sign of space charge density

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 570, Issue 2 SPEC. ISS., 2007, Pages 322-329

  Scaringella, M ^a,b   Menichelli, D ^a,b   Bruzzi, M ^a,b   Macchiolo, A ^a   Piemonte, C ^c   Zorzi, N ^c   Candelori, A ^d   Eremin, V ^e   Verbitskaya, E ^e   Pintilie, I ^f  

^a Department of Energetics ^*  (Italy)

^b INFN SEZIONE DI FIRENZE   (Italy)

^c ITC IRST   (Italy)

^d SEZIONE DI PADOVA   (Italy)

^e IOFFE INSTITUTE   (Russian Federation)

^f NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Current transients; Deep levels; Radiation damage; Silicon; TCT; TSC; Type inversion

Indexed keywords

ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; MAGNETIC MATERIALS; PROTON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTOR DIODES; TRANSIENTS;

CURRENT TRANSIENTS; MICROSCOPIC DAMAGE; THERMALLY STIMULATED CURRENTS (TSC); TRANSIENT CURRENT TECHNIQUE (TCT);

SEMICONDUCTING SILICON;

EID: 33845951748     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.09.033     Document Type: Article

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