Radiation damage studies on MCz and standard and oxygen enriched epitaxial silicon devices

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 583, Issue 1, 2007, Pages 58-63

  Fretwurst, E ^a   Honniger F ^a   Kramberger, G ^b   Lindstrom G ^a   Pintilie, I ^a,c   Roder R ^d  

^a UNIVERSITY OF HAMBURG   (Germany)

^b UNIVERSITY OF LJUBLJANA   (Slovenia)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^d CiS Institut für Mikrosensorik gGmbH   (Germany)

Author keywords

Magnetic Czochralski and epitaxial silicon; Neutron radiation; Radiation damage; Silicon detectors

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH FROM MELT; EPITAXIAL LAYERS; RADIATION DAMAGE; SUBSTRATES;

CARBON CONCENTRATION; DIODE PROCESSING; MAGNETIC CZOCHRALSKI AND EPITAXIAL SILICON; NEUTRON RADIATIONS;

SILICON DETECTORS;

EID: 36549006168     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.08.194     Document Type: Article

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