Radiation hardness of silicon - A challenge for defect engineering

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 705-709

  Stahl, J ^a   Fretwurst, E ^a   Lindstroem, G ^a   Pintilie, I ^b  

^a UNIVERSITY OF HAMBURG   (Germany)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Cz; Defect engineering; Epitaxial silicon; FZ; Radiation hardness

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH FROM MELT; DEFECTS; DOPING (ADDITIVES); ELECTRIC CURRENT MEASUREMENT; EPITAXIAL GROWTH; HIGH ENERGY PHYSICS; PARTICLE DETECTORS; PROTONS; RADIATION DAMAGE; RADIATION HARDENING;

DEFECT ENGINEERING; EPITAXIAL SILICON; FLOAT ZONE (FZ) SILICON;

SILICON;

EID: 0346504191     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.238     Document Type: Conference Paper

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