Design of S-graded buffer layers for metamorphic ZnSy Se 1-y /GaAs (001) semiconductor devices

Journal of Electronic Materials

Volumn 42, Issue 12, 2013, Pages 3408-3420

  Kujofsa, T ^a   Antony, A ^a   Xhurxhi, S ^a   Obst, F ^a   Sidoti, D ^a   Bertoli, B ^a   Cheruku, S ^a   Correa, J P ^a   Rago, P B ^a   Suarez, E N ^a   Jain, F C ^a   Ayers, J E ^a  

^a University of Connecticut   (United States)

Author keywords

energy minimization; equilibrium strain; Metamorphic buffer; misfit dislocation density; S graded; ZnSSe GaAs (001)

Indexed keywords

ENERGY MINIMIZATION; EQUILIBRIUM STRAIN; METAMORPHIC BUFFERS; MISFIT DISLOCATION DENSITIES; S-GRADED; ZNSSE/GAAS (001);

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM ARSENIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LATTICE MISMATCH; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; ZINC SULFIDE;

DESIGN;

EID: 84888176631     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-013-2771-0     Document Type: Article

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