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Volumn 279, Issue 1-2, 2005, Pages 20-25
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Room-temperature yellow-amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(1 0 0) substrates
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Author keywords
A1. Nanostructures; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting indium gallium phosphide
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Indexed keywords
ENERGY UTILIZATION;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
MOLECULAR BEAM EPITAXY;
NANOSTRUCTURED MATERIALS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
TRANSMISSION ELECTRON MICROSCOPY;
METAMORPHIC BUFFER LAYER;
PHOSPHIDES;
SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE;
STRUCTURAL QUALITY;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 17744391980
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.01.103 Document Type: Article |
Times cited : (8)
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References (10)
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