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Volumn 279, Issue 1-2, 2005, Pages 20-25

Room-temperature yellow-amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(1 0 0) substrates

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting indium gallium phosphide

Indexed keywords

ENERGY UTILIZATION; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 17744391980     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.103     Document Type: Article
Times cited : (8)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.