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Volumn 158, Issue 9, 2011, Pages
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Study of metamorphic co-integrated heterostructure bipolar and field-effect transistors (BiFETs)
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Author keywords
[No Author keywords available]
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Indexed keywords
BASE EMITTER JUNCTION;
COLLECTOR EMITTERS;
CURRENT GAINS;
DC PERFORMANCE;
ENERGY BAND;
EXTRINSIC TRANSCONDUCTANCE;
GAAS SUBSTRATES;
HEAVILY DOPED;
INP;
INP/INGAAS;
LOW OFFSET;
METAMORPHIC HETEROSTRUCTURE;
OFFSET VOLTAGE;
POTENTIAL SPIKE;
SATURATION CURRENT DENSITIES;
BIPOLAR SEMICONDUCTOR DEVICES;
FIELD EFFECT SEMICONDUCTOR DEVICES;
GALLIUM ALLOYS;
HETEROJUNCTION BIPOLAR TRANSISTORS;
HETEROJUNCTIONS;
INTEGRATION;
TRANSISTORS;
TWO DIMENSIONAL ELECTRON GAS;
FIELD EFFECT TRANSISTORS;
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EID: 79960925763
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.3610224 Document Type: Article |
Times cited : (11)
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References (12)
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