Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy

Journal of Physics D: Applied Physics

Volumn 39, Issue 9, 2006, Pages 1800-1804

  Shang, X Z ^a   Wu, S D ^b   Liu, C ^a   Wang, W X ^b   Guo, L W ^b   Huang, Q ^b   Zhou, J M ^b  

^a WUHAN UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; HALL NOBILITIES; ROOT MEAN SQUARE SURFACE ROUGHNESS;

MOLECULAR BEAM EPITAXY;

EID: 33646397311     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/9/015     Document Type: Article

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