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Volumn , Issue , 2012, Pages
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Demonstration of high temperature operation in 1.3-μm-range metamorphic InGaAs laser
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM ALLOYS;
GALLIUM COMPOUNDS;
HIGH TEMPERATURE OPERATIONS;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR ALLOYS;
ELECTRON STOPPER LAYER;
HIGH CHARACTERISTIC TEMPERATURE;
OPERATING TEMPERATURE;
P-CLADDING;
INDIUM ALLOYS;
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EID: 84890574845
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1364/cleo_si.2012.ctu2n.1 Document Type: Conference Paper |
Times cited : (7)
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References (4)
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