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Volumn , Issue , 2012, Pages

Demonstration of high temperature operation in 1.3-μm-range metamorphic InGaAs laser

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM COMPOUNDS; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS;

EID: 84890574845     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1364/cleo_si.2012.ctu2n.1     Document Type: Conference Paper
Times cited : (7)

References (4)
  • 1
    • 0028392494 scopus 로고
    • 1.3 μm InGaAs/GaAs strained quantum well lasers with InGaP cladding layer
    • T. Uchida, H. Kurakake, H. Soda and S. Yamazaki: "1.3 μm InGaAs/GaAs strained quantum well lasers with InGaP cladding layer", Electron. Lett., Vol. 30, pp. 563-565, 1994.
    • (1994) Electron. Lett. , vol.30 , pp. 563-565
    • Uchida, T.1    Kurakake, H.2    Soda, H.3    Yamazaki, S.4
  • 2
    • 33947306874 scopus 로고    scopus 로고
    • Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
    • I. Tångring, S.M. Wang, M. Sadeghi, A. Larsson and X.D. Wang: "Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy", Journal of Crystal Growth, Vol. 301-302, pp. 971-974, 2007.
    • (2007) Journal of Crystal Growth , vol.301-302 , pp. 971-974
    • Tångring, I.1    Wang, S.M.2    Sadeghi, M.3    Larsson, A.4    Wang, X.D.5
  • 3
    • 55349115734 scopus 로고    scopus 로고
    • High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate
    • M. Arai, T. Fujisawa, W. Kobayashi, K. Nakashima, M. Yuda and Y. Kondo, "High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate", Electron Lett., Vol. 44, pp. 1359-1360, 2008.
    • (2008) Electron Lett. , vol.44 , pp. 1359-1360
    • Arai, M.1    Fujisawa, T.2    Kobayashi, W.3    Nakashima, K.4    Yuda, M.5    Kondo, Y.6
  • 4
    • 3643063531 scopus 로고    scopus 로고
    • 1.3-μm AlGaInAs-AlGaInAs Strained Multiple-Quantum-Well Lasers with a p-AlInAs Electron Stopper Layer
    • K. Takemasa, T. Munakata, M. Kobayashi, H. Wada and T. Kamijoh: "1.3-μm AlGaInAs-AlGaInAs Strained Multiple-Quantum-Well Lasers with a p-AlInAs Electron Stopper Layer", IEEE Photon. Technol. Lett., Vol.10, No.4, pp.495-497, 1998.
    • (1998) IEEE Photon. Technol. Lett. , vol.10 , Issue.4 , pp. 495-497
    • Takemasa, K.1    Munakata, T.2    Kobayashi, M.3    Wada, H.4    Kamijoh, T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.