메뉴 건너뛰기




Volumn 40, Issue 12, 2011, Pages 2348-2354

S-graded buffer layers for lattice-mismatched heteroepitaxial devices

Author keywords

dislocations; graded layers; S grading; Semiconductors; strain relaxation

Indexed keywords

DEVICE INTERFACES; DISLOCATION-FREE; EQUILIBRIUM STRAIN; FREE SURFACES; GAAS(001); GRADED BUFFER; GRADED LAYERS; HETEROEPITAXIAL; LATTICE-MISMATCHED; METAMORPHIC DEVICES; MISFIT DISLOCATION DENSITIES; NORMAL CUMULATIVE DISTRIBUTION FUNCTION; S-GRADING; SUBSTRATE INTERFACE; THEORETICAL STUDY; THREADING DISLOCATION; TOP SURFACE;

EID: 82955233177     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1781-z     Document Type: Article
Times cited : (15)

References (18)
  • 4
    • 46749101479 scopus 로고
    • 1:CAS:528:DyaF2sXktFGlsbw%3D
    • D Richman JJ Tietjen 1967 Trans. AIME 239 418 1:CAS:528: DyaF2sXktFGlsbw%3D
    • (1967) Trans. AIME , vol.239 , pp. 418
    • Richman, D.1    Tietjen, J.J.2
  • 8
    • 0024069115 scopus 로고
    • 10.1016/0022-0248(88)90119-4 1:CAS:528:DyaL1MXhtVGgtb4%3D
    • RM Biefeld CR Hills SR Lee 1988 J. Cryst. Growth 91 515 10.1016/0022-0248(88)90119-4 1:CAS:528:DyaL1MXhtVGgtb4%3D
    • (1988) J. Cryst. Growth , vol.91 , pp. 515
    • Biefeld, R.M.1    Hills, C.R.2    Lee, S.R.3
  • 14
    • 60649113385 scopus 로고    scopus 로고
    • 10.1016/j.jcrysgro.2008.10.116 1:CAS:528:DC%2BD1MXisV2qsLg%3D
    • H Choi Y Jeong J Cho MH Jeon 2009 J. Cryst. Growth 311 1091 10.1016/j.jcrysgro.2008.10.116 1:CAS:528:DC%2BD1MXisV2qsLg%3D
    • (2009) J. Cryst. Growth , vol.311 , pp. 1091
    • Choi, H.1    Jeong, Y.2    Cho, J.3    Jeon, M.H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.