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Volumn 40, Issue 12, 2011, Pages 2348-2354
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S-graded buffer layers for lattice-mismatched heteroepitaxial devices
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Author keywords
dislocations; graded layers; S grading; Semiconductors; strain relaxation
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Indexed keywords
DEVICE INTERFACES;
DISLOCATION-FREE;
EQUILIBRIUM STRAIN;
FREE SURFACES;
GAAS(001);
GRADED BUFFER;
GRADED LAYERS;
HETEROEPITAXIAL;
LATTICE-MISMATCHED;
METAMORPHIC DEVICES;
MISFIT DISLOCATION DENSITIES;
NORMAL CUMULATIVE DISTRIBUTION FUNCTION;
S-GRADING;
SUBSTRATE INTERFACE;
THEORETICAL STUDY;
THREADING DISLOCATION;
TOP SURFACE;
BUFFER LAYERS;
DENSITY FUNCTIONAL THEORY;
DISLOCATIONS (CRYSTALS);
DISTRIBUTION FUNCTIONS;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
INTERFACES (MATERIALS);
NORMAL DISTRIBUTION;
SEMICONDUCTOR MATERIALS;
STRAIN RELAXATION;
SUBSTRATES;
HETEROJUNCTIONS;
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EID: 82955233177
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-011-1781-z Document Type: Article |
Times cited : (15)
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References (18)
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