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Volumn 315, Issue 1, 2011, Pages 96-101
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Effects of antimony (Sb) incorporation on MOVPE grown InAs yP1-y metamorphic buffer layers on InP substrates
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Author keywords
A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Arsenides; B1. Indium compounds; B1. Phosphides; B3. Infrared devices
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Indexed keywords
ANTIMONIDES;
B1. ARSENIDES;
B1. INDIUM COMPOUNDS;
B1. PHOSPHIDES;
B3. INFRARED DEVICES;
METAL-ORGANIC VAPOR PHASE EPITAXY;
ARSENIC;
BUFFER LAYERS;
DEFECT DENSITY;
DEFECTS;
EPITAXIAL GROWTH;
INDIUM ARSENIDE;
INFRARED DEVICES;
METALLORGANIC VAPOR PHASE EPITAXY;
PHOSPHORUS COMPOUNDS;
SEMICONDUCTING INDIUM;
SURFACE PROPERTIES;
SURFACE ROUGHNESS;
VAPORS;
SURFACE MORPHOLOGY;
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EID: 79551681224
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.09.054 Document Type: Article |
Times cited : (18)
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References (18)
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