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Applied Physics Letters

Volumn 88, Issue 4, 2006, Pages 1-3

Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si

(4) Raghavan, Srinivasan a Weng, Xiaojun a Dickey, Elizabeth a Redwing, Joan M a

a PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM CRACKING; GROWTH STRESS; MICROSTRUCTURAL EVOLUTION;

COMPRESSIVE STRESS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 31544468663 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2168020 Document Type: Article

Times cited : (59)

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