Temperature dependence of stacking faults in catalyst-free GaAs nanopillars

Nanotechnology

Volumn 24, Issue 47, 2013, Pages

  Shapiro, Joshua N ^a   Lin, Andrew ^a   Ratsch, Christian ^b   Huffaker, D L ^a  

^a CALIFORNIA NANOSYSTEMS INSTITUTE   (United States)

^b Institute for Pure and Applied Math   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLASSICAL NUCLEATION THEORY; CRITICAL NUCLEI; FACE-CENTERED CUBIC; GROWTH TECHNIQUES; MINIMUM ENERGY; SELECTIVE-AREA EPITAXY; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

CATALYSTS; DENSITY FUNCTIONAL THEORY; GALLIUM ARSENIDE; GROWTH TEMPERATURE; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

STACKING FAULTS;

EID: 84887731648     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/47/475601     Document Type: Article

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