Surface reconstructions and phase transitions on the GaAs(111)B surface

Surface Science

Volumn 380, Issue 2-3, 1997, Pages 548-555

  Thornton, J M C ^a   Woolf, D A ^b,c   Weightman, P ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UWCC   (United Kingdom)

^c NONE   (United Kingdom)

Author keywords

Gallium arsenide; Molecular beam epitaxy; Scanning tunneling microscopy; Surface structure

Indexed keywords

ANNEALING; ATOMS; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; STOICHIOMETRY; SURFACE STRUCTURE; SURFACE TREATMENT; THERMAL EFFECTS;

SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031146971     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00042-3     Document Type: Article

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