Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(1 1 1)B surface reconstructions in selective-area metal organic vapour-phase epitaxy

Journal of Crystal Growth

Volumn 312, Issue 1, 2009, Pages 52-57

  Yoshida, Hiroatsu ^a   Ikejiri, Keitaro ^a   Sato, Takuya ^a   Hara, Shinjiroh ^a   Hiruma, Kenji ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A1. Nanowire; A1. Surface reconstruction; A1. Twin defect; A3. Metalorganic vapor phase epitaxy; B2. Gallium arsenide

Indexed keywords

A1. NANOWIRE; A1. SURFACE RECONSTRUCTION; A1. TWIN DEFECT; A3. METALORGANIC VAPOR PHASE EPITAXY; B2. GALLIUM ARSENIDE;

ARSENIC COMPOUNDS; CRYSTAL GROWTH; CRYSTALS; DEFECTS; ELECTRIC WIRE; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; ORGANOMETALLICS; PHASE DIAGRAMS; REPAIR; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SUBSTRATES; SURFACE DEFECTS; SURFACE RECONSTRUCTION; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

GALLIUM ALLOYS;

EID: 70449492789     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.006     Document Type: Article

References (29)

1. Bryllert T., Wernersson L.E., Löwgren T., and Samuelson L. Nanotechnology 17 (2006) S227
2. Xiang J., Lu W., Hu Y., Wu Y., Yan H., and Lieber C.M. Nature 441 (2006) 489
3. Björk M.T., Hayden O., Schmid H., Riel H., and Riess W. Appl. Phys. Lett. 90 (2007) 142110
4. Noborisaka J., Motohisa J., Hara S., Tomioka K., and Fukui T. Jpn. J. Appl. Phys. 46 (2007) 7562
5. Gudiksen M.S., Lauhon L.J., Wang J., Smith D.C., and Lieber C.M. Nature 415 (2002) 617
6. Cui Y., Wei Q., Park H., and Lieber C.M. Science 293 (2001) 1289
7. Noborisaka J., Motohisa J., Hara S., and Fukui T. Appl. Phys. Lett. 87 (2005) 093109
8. Mohan P., Motohisa J., and Fukui T. Appl. Phys. Lett. 88 (2006) 133105
9. Yang L., Motohisa J., Takeda J., Tomioka K., and Fukui T. Appl. Phys. Lett. 89 (2006) 203110
10. Tomioka K., Mohan P., Noborisaka J., Hara S., Motohisa J., and Fukui T. J. Cryst. Growth 298 (2007) 644
11. Tomioka K., Motohisa J., Hara S., and Fukui T. Jpn. J. Appl. Phys. 46 (2007) L1102
12. Ando S., Kobayashi N., and Ando H. J. Cryst. Growth 145 (1994) 302
13. Ikejiri K., Noborisaka J., Hara S., Motohisa J., and Fukui T. J. Cryst. Growth 298 (2007) 616
14. Ikejiri K., Sato T., Yoshida H., Hiruma K., Motohisa J., Hara S., and Fukui T. Nanotechnology 19 (2008) 265604
15. Ren H.-W., Tanaka M., and Nishinaga T. Appl. Phys. Lett. 69 (1996) 565
16. Ren H.-W., and Nishinaga T. Phys. Rev. B 54 (1996) R11 054
17. Biegelsen D.K., Bringans R.D., Northrup J.E., and Swartz L.-E. Phys. Rev. Lett. 65 (1990) 452
18. Thornton J.M.C., Woolf D.A., and Weightman P. Appl. Surf. Sci. 123/124 (1998) 115
19. Rajkumar K.C., Chen P., and Madhukar A. J. Appl. Phys. 69 (1991) 2219
20. Woolf D.A., Westwood D.I., and Williams R.H. Appl. Phys. Lett. 62 (1993) 1370
21. Chen P., Rajkumar K.C., and Madhukar A. Appl. Phys. Lett 58 (1991) 1771
22. Nishida T., Uwai K., Kobayashi Y., and Kobayashi N. Jpn. J. Appl. Phys. 34 (1995) 6326
23. Park Y., Cich M.J., Zhao R., Specht P., and Weber E.R. J. Vac. Sci. Technol. B 18 (2000) 1566
24. Taki T., Narita K., Koukitu A., and Seki H. Jpn. J. Appl. Phys. 37 (1998) L1367
25. Hurle D.T.J. J. Cryst. Growth 147 (1995) 239
26. Akiyama T., Sano K., Nakamura K., and Ito T. Jpn. J. Appl. Phys. 45 (2006) L275
27. Tomioka K., Kobayashi Y., Motohisa J., Hara S., and Fukui T. Nanotechnology 20 (2009) 145302
28. Mohan P., Motohisa J., and Fukui T. Nanotechnology 16 (2005) 2903
29. Hiruma K., Yazawa H., Katsuyama T., Ogawa K., Haraguchi K., Koguchi M., and Kakibayashi H. J. Appl. Phys. 77 (1995) 447