MIM capacitors based on ZrTiOx/BaZryTi\1-yO 3 featuring record-low VCC and excellent reliability

IEEE Electron Device Letters

Volumn 34, Issue 11, 2013, Pages 1418-1420

  Lin, Chia Chun ^a   Wu, Yung Hsien ^a   Jiang, Ren Siang ^a   Yu, Meng Ting ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

conduction mechanism; dielectric loss; frequency dispersion; leakage current; metal insulator metal (MIM) capacitors; perovskite; reliability; ZrTiOx BaZryTi 1 yO3

Indexed keywords

CONDUCTION MECHANISM; CONSTANT VOLTAGE STRESS; FREQUENCY DISPERSION; LOW-LEAKAGE CURRENT; METAL INSULATOR METAL CAPACITOR (MIM); PARTIAL CRYSTALLIZATION; VOLTAGE COEFFICIENT OF CAPACITANCES; ZRTIOX/BAZRYTI\1-YO3;

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; PEROVSKITE; RELIABILITY;

MIM DEVICES;

EID: 84887233842     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2281935     Document Type: Article

References (17)

1. C. H. Cheng, H. C. Pan, C. C. Huang, et al., "Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode, " IEEE Electron Device Lett., vol. 29, no. 10, pp. 1105-1107, Oct. 2008.
2. S. H. Lin, K. C. Chiang, F. S. Yeh, et al., "Improved stress reliability of analog metal-insulator-metal capacitors using TiO2/ZrO2 dielectrics, " IEEE Electron Device Lett., vol. 30, no. 12, pp. 1287-1289, Dec. 2009.
3. C. Y. Tsai, K. C. Chiang, S. H. Lin, et al., "Improved capacitance density and reliability of high-? Ni/ZrO2/TiN MIM capacitors using laser-annealing technique, " IEEE Electron Device Lett., vol. 31, no. 7, pp. 749-751, Jul. 2010.
4. Y. H. Wu, C. C. Lin, Y. C. Hu, et al., "High-performance metal-insulator-metal capacitor using stacked TiO2/Y2O3 as insulator, " IEEE Electron Device Lett., vol. 32, no. 8, pp. 1107-1109, Aug. 2011.
5. S. Mondal and T. M. Pan, "High-performance Ni/Lu2O3/TaN metal-insulator-metal capacitors, " IEEE Electron Device Lett., vol. 32, no. 11, pp. 1576-1578, Nov. 2011.
6. S. J. Kim, B. J. Cho, S. J. Ding, et al., "Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-Signal ICs, " in Symp. VLSI Tech. Dig., Jun. 2004, pp. 218-219.
7. J. J. Yang, J. D. Chen, R. Wise, et al., "Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using Sm2O3/SiO2 dielectric stack, " IEEE Electron Device Lett., vol. 30, no. 5, pp. 460-462, May 2009.
8. T. H. Phung, D. K. Srinivasan, P. Steinmann, et al., "High performance metal-insulator-metal capacitors with Er2O3 on ALD SiO2 for RF applications, " J. Electrochem. Soc., vol. 158, no. 12, pp. H1289-H1292, 2011.
9. Y. H.Wu, W. Y. Ou, C. C. Lin, et al., "MIM capacitors with crystalline-TiO2/SiO2 stack featuring high capacitance density and low voltage coefficient, " IEEE Electron Device Lett., vol. 33, no. 1, pp. 104-106, Jan. 2012.
10. T. H. Phung, P. Steinmann, R. Wise, et al., "Modeling the negative quadratic VCC of SiO2 in MIM capacitor, " IEEE Electron Device Lett., vol. 32, no. 12, pp. 1671-1673, Dec. 2011.
11. L. L. Chen, Y. H. Wu, Y. B. Lin, et al., "ZrLaOx/ZrTiOx/ZrLaOx laminate as insulator for MIM capacitors with high capacitance density and low quadratic voltage coefficient using canceling effect, " IEEE Electron Device Lett., vol. 33, no. 10, pp. 1447-1449, Oct. 2012.
12. E. Defaÿ, D. Wolozan, J. P. Blanc, et al., "High pass filter with above IC integrated SrTiO3 high K MIM capacitors, " Solid State Electron, vol. 51, nos. 11-12, pp. 1624-1628, 2007. (Pubitemid 350138027)
13. T. B. Wu, C. M. Wu, and M. L. Chen, "Highly insulative barium zirconate-titanate thin films prepared by RF magnetron sputtering for dynamic random access memory applications, " Appl. Phys. Lett., vol. 69, no. 18, pp. 2659-2661, 1996. (Pubitemid 126592905)
14. T. Maiti, R. Guo, and A. S. Bhalla, "Enhanced electric field tunable dielectric properties of BaZrxTi1?xO3 relaxor ferroelectrics, " Appl. Phys. Lett., vol. 90, no. 18, pp. 182901-1-182901-3, 2007.
15. Y. H. Wu, C. K. Kao, B. Y. Chen, et al., "High density metal-insulatormetal capacitor based on ZrO2/Al2O3/ZrO2 laminate dielectric, " Appl. Phys. Lett., vol. 93, no. 3, pp. 033511-1-033511-3, 2008.
16. H. Hu, C. Zhu, X. Yu, et al., "MIM capacitors using atomic-layerdeposited high-?(HfO2)1?x(Al2O3)x dielectrics, " IEEE Electron Device Lett., vol. 24, no. 2, pp. 60-62, Feb. 2003.
17. R. Padmanabhan, N. Bhat, and S. Mohan, "Performance and reliability of Gd2O3 and stacked Gd2O3-Eu2O3 metal-insulator-metal capacitors, " IEEE Trans. Electron Dev., vol. 60, no. 5, pp. 1523-1528, May 2013.