-
2
-
-
48749083398
-
High density and low leakage current in TiO2 MIM capacitors processed at 300 °C
-
Aug
-
C. H. Cheng, S. H. Lin, K. Y. Jhou, W. J. Chen, C. P. Chou, F. S. Yeh, J. Hu, M. Hwang, T. Arikado, S. P. McAlister, and A. Chin, "High density and low leakage current in TiO2 MIM capacitors processed at 300 °C," IEEE Electron Device Lett., vol. 29, no. 8, pp. 845-847, Aug. 2008.
-
(2008)
IEEE Electron Device Lett.
, vol.29
, Issue.8
, pp. 845-847
-
-
Cheng, C.H.1
Lin, S.H.2
Jhou, K.Y.3
Chen, W.J.4
Chou, C.P.5
Yeh, F.S.6
Hu, J.7
Hwang, M.8
Arikado, T.9
McAlister, S.P.10
Chin, A.11
-
3
-
-
77957011795
-
High-density MIM capacitors with porous anodic alumina dielectric
-
Oct.
-
E. Hourdakis and A. G. Nassiopoulou, "High-density MIM capacitors with porous anodic alumina dielectric," IEEE Trans. Electron Dev., vol. 57, no. 10, pp. 2679-2683, Oct. 2010.
-
(2010)
IEEE Trans. Electron Dev.
, vol.57
, Issue.10
, pp. 2679-2683
-
-
Hourdakis, E.1
Nassiopoulou, A.G.2
-
4
-
-
79953174275
-
2, Sr- Ta-O and Ti-Ta-O high-k dielectrics for metal-insulator-metal applications
-
Mar.
-
M. Lukosius, C. B. Kaynak, S. Rushworth, and C. Wenger, "HfO2, Sr- Ta-O and Ti-Ta-O high-k dielectrics for metal-insulator-metal applications," J. Electrochem. Soc., vol. 158, no. 5, pp. G119-G123, Mar. 2011.
-
(2011)
J. Electrochem. Soc.
, vol.158
, Issue.5
-
-
Lukosius, M.1
Kaynak, C.B.2
Rushworth, S.3
Wenger, C.4
-
5
-
-
69549105833
-
x -based MIM capacitors
-
Nov.
-
C. Mahata, M. K. Bera, M. K. Hota, T. Das, S. Mallik, B. Majhi, S. Verma, P. K. Bose, and C. K. Maiti, "High performance TaYOx -based MIM capacitors," Microelectron. Eng., vol. 86, no. 11, pp. 2180-2186, Nov. 2009.
-
(2009)
Microelectron. Eng.
, vol.86
, Issue.11
, pp. 2180-2186
-
-
Mahata, C.1
Bera, M.K.2
Hota, M.K.3
Das, T.4
Mallik, S.5
Majhi, B.6
Verma, S.7
Bose, P.K.8
Maiti, C.K.9
-
6
-
-
77957706116
-
x high-k dielectric for metal-insulator-metal capacitor applications
-
Oct.
-
M. K. Hota, C. Mahata, M. K. Bera, S. Mallik, C. K. Sarkar, S. Varma, and C. K. Maiti, "Preparation and characterization of TaAlOx high-k dielectric for metal-insulator-metal capacitor applications," Thin Solid Films, vol. 519, no. 1, pp. 423-429, Oct. 2010.
-
(2010)
Thin Solid Films
, vol.519
, Issue.1
, pp. 423-429
-
-
Hota, M.K.1
Mahata, C.2
Bera, M.K.3
Mallik, S.4
Sarkar, C.K.5
Varma, S.6
Maiti, C.K.7
-
7
-
-
70450200549
-
Characteristics of cerium oxide for metal-insulator-metal capacitors
-
C. H. Cheng, H. H. Hsu, W. B. Chen, A. Chin, and F. S. Yeh, "Characteristics of cerium oxide for metal-insulator-metal capacitors," Electrochem. Solid-State Lett., vol. 13, no. 1, pp. H16-H19, 2010.
-
(2010)
Electrochem. Solid-State Lett.
, vol.13
, Issue.1
-
-
Cheng, C.H.1
Hsu, H.H.2
Chen, W.B.3
Chin, A.4
Yeh, F.S.5
-
8
-
-
70449592146
-
2 laminated dielectrics for analog circuit applications
-
Nov.
-
J. D. Chen, J. J. Yang, R. Wise, P. Steinmann, M. B. Yu, C. Zhu, and Y. C. Yeo, "Physical and electrical characterization of metal-insulatormetal capacitors with Sm2O3 and Sm2O3/SiO2 laminated dielectrics for analog circuit applications," IEEE Trans. Electron Dev., vol. 56, no. 11, pp. 2683-2691, Nov. 2009.
-
(2009)
IEEE Trans. Electron Dev.
, vol.56
, Issue.11
, pp. 2683-2691
-
-
Chen, J.D.1
Yang, J.J.2
Wise, R.3
Steinmann, P.4
Yu, M.B.5
Zhu, C.6
Yeo, Y.C.7
-
9
-
-
80055015762
-
3/TaN metalinsulator- metal capacitors
-
Nov.
-
S. Mondal and T.-M. Pan, "High-performance Ni/Lu2O3/TaN metalinsulator- metal capacitors," IEEE Electron Device Lett., vol. 32, no. 11, pp. 1576-1578, Nov. 2011.
-
(2011)
IEEE Electron Device Lett.
, vol.32
, Issue.11
, pp. 1576-1578
-
-
Mondal, S.1
Pan, T.-M.2
-
10
-
-
84860228190
-
High-performance metal-insulator-metal capacitors using europium oxide as dielectric
-
May
-
R. Padmanabhan, N. Bhat, and S. Mohan, "High-performance metal-insulator-metal capacitors using europium oxide as dielectric," IEEE Trans. Electron Dev., vol. 59, no. 5, pp. 1364-1370, May 2012.
-
(2012)
IEEE Trans. Electron Dev.
, vol.59
, Issue.5
, pp. 1364-1370
-
-
Padmanabhan, R.1
Bhat, N.2
Mohan, S.3
-
11
-
-
84890880366
-
3-based dielectrics
-
Dec.
-
R. Padmanabhan, N. Bhat, and S. Mohan, "High-density metal-insulatormetal capacitors using Gd2O3-based dielectrics," in Proc. IEEE Int. Conf. Emerging Electron., Dec. 2012, pp. 15-18.
-
(2012)
Proc. IEEE Int. Conf. Emerging Electron
, pp. 15-18
-
-
Padmanabhan, R.1
Bhat, N.2
Mohan, S.3
-
12
-
-
0035505119
-
Optical constants of evaporated gadolinium oxide
-
DOI 10.1088/1464-4258/3/6/304, PII S1464425801281811
-
A. A. Dakhel, "Optical constants of evaporated gadolinium oxide," J. Opt. A, Pure Appl. Opt., vol. 3, no. 6, pp. 452-454, Sep. 2001. (Pubitemid 33093941)
-
(2001)
Journal of Optics A: Pure and Applied Optics
, vol.3
, Issue.6
, pp. 452-454
-
-
Dakhel, A.A.1
-
13
-
-
79955394552
-
3/Si capacitors
-
Apr.
-
E. Lipp, Z. Shahar, B. C. Bittel, P. M. Lenahan, D. Schwendt, H. J. Osten, and M. Eizenberg, "Trap-assisted conduction in Ptgated Gd2O3/Si capacitors," J. Appl. Phys., vol. 109, no. 7, pp. 073724-1-073724-6, Apr. 2011.
-
(2011)
J. Appl. Phys.
, vol.109
, Issue.7
, pp. 0737241-0737246
-
-
Lipp, E.1
Shahar, Z.2
Bittel, B.C.3
Lenahan, P.M.4
Schwendt, D.5
Osten, H.J.6
Eizenberg, M.7
-
14
-
-
0024754664
-
Dielectric and optical properties of europium oxide films
-
DOI 10.1016/0040-6090(89)90556-7
-
M. K. Jayaraj and C. P. G. Vallabhan, "Dielectric and optical properties of europium oxide films," Thin Solid Films, vol. 177, nos. 1-2, pp. 59-67, May 1989. (Pubitemid 20622163)
-
(1989)
Thin Solid Films
, vol.177
, Issue.1-2
, pp. 59-67
-
-
Jayaraj, M.K.1
Vallabhan, C.P.G.2
-
15
-
-
77953489538
-
Electrode oxygen-affinity influence on voltage nonlinearities in high-k metalinsulator- metal capacitors
-
Jun.
-
C. Vallee, P. Gonon, C. Jorel, and F. E. Kamel, "Electrode oxygen-affinity influence on voltage nonlinearities in high-k metalinsulator- metal capacitors," Appl. Phys. Lett., vol. 96, no. 23, pp. 233504-1-233504-4, Jun. 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, Issue.23
, pp. 2335041-2335044
-
-
Vallee, C.1
Gonon, P.2
Jorel, C.3
Kamel, F.E.4
-
16
-
-
34548238103
-
Impact of TiN plasma post-treatment on alumina electron trapping
-
Jun.
-
A. Bajolet, S. Bruyere, M. Proust, L. Montes, and G. Ghibaudo, "Impact of TiN plasma post-treatment on alumina electron trapping," IEEE Trans. Device Mater. Rel., vol. 7, no. 2, pp. 242-251, Jun. 2007.
-
(2007)
IEEE Trans. Device Mater. Rel.
, vol.7
, Issue.2
, pp. 242-251
-
-
Bajolet, A.1
Bruyere, S.2
Proust, M.3
Montes, L.4
Ghibaudo, G.5
-
17
-
-
77955161627
-
3 stacked dielectric
-
Aug.
-
B.-Y. Tsui, H.-H. Hsu, and C.-H. Cheng, "High-performance metalinsulator- metal capacitors with HfTiO/Y2O3 stacked dielectric," IEEE Electron Device Lett., vol. 31, no. 8, pp. 875-877, Aug. 2010.
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.8
, pp. 875-877
-
-
Tsui, B.-Y.1
Hsu, H.-H.2
Cheng, C.-H.3
-
18
-
-
34047246671
-
Modeling of nonlinearities in the capacitancevoltage characteristics of high-k metal-insulator-metal capacitors
-
Apr.
-
P. Gonon and C. Vallee, "Modeling of nonlinearities in the capacitancevoltage characteristics of high-k metal-insulator-metal capacitors," Appl. Phys. Lett., vol. 90, no. 14, pp. 142906-1-142906-3, Apr. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.90
, Issue.14
, pp. 1429061-1429063
-
-
Gonon, P.1
Vallee, C.2
-
19
-
-
51849105994
-
The role of carbon contamination in voltage linearity and leakage current in highk metal-insulator-metal capacitors
-
Sep.
-
B. Miao, R. Mahapatra, N. Wright, and A. Horsfall, "The role of carbon contamination in voltage linearity and leakage current in highk metal-insulator-metal capacitors," J. Appl. Phys., vol. 104, no. 5, pp. 054510-1-054510-8, Sep. 2008.
-
(2008)
J. Appl. Phys.
, vol.104
, Issue.5
, pp. 0545101-0545108
-
-
Miao, B.1
Mahapatra, R.2
Wright, N.3
Horsfall, A.4
-
20
-
-
2942661891
-
3 laminate MIM capacitors for Si RF IC applications
-
Jun.
-
S.-J. Ding, H. Hu, C. Zhu, S. J. Kim, X. Yu, M.-F. Li, B. J. Cho, D. S. H. Chan, M. B. Yu, S. C. Rustagi, A. Chin, and D.-L. Kwong, "RF, DC, and reliability characteristics of atomic layer deposited HfO2- Al2O3 laminate MIM capacitors for Si RF IC applications," IEEE Trans. Electron Dev., vol. 51, no. 6, pp. 886-894, Jun. 2004.
-
(2004)
IEEE Trans. Electron Dev.
, vol.51
, Issue.6
, pp. 886-894
-
-
Ding, S.-J.1
Hu, H.2
Zhu, C.3
Kim, S.J.4
Yu, X.5
Li, M.-F.6
Cho, B.J.7
Chan, D.S.H.8
Yu, M.B.9
Rustagi, S.C.10
Chin, A.11
Kwong, D.-L.12
-
21
-
-
79551617539
-
5 high-k dielectric metal-insulator-metal capacitors prepared by wet anodization
-
Jan.-Feb.
-
N. Sedghi, W. Davey, I. Z. Mitrovic, and S. Hall, "Reliability studies on Ta2O5 high-k dielectric metal-insulator-metal capacitors prepared by wet anodization," J. Vac. Sci. Technol. B, vol. 29, no. 1, pp. 01AB10-1-01AB10-8, Jan.-Feb. 2011.
-
(2011)
J. Vac. Sci. Technol. B
, vol.29
, Issue.1
-
-
Sedghi, N.1
Davey, W.2
Mitrovic, I.Z.3
Hall, S.4
-
22
-
-
1642398973
-
A study of relaxation current in high-k dielectric stacks
-
Mar.
-
Z. Xu, L. Pantisano, A. Kerber, R. Degraeve, E. Cartier, S. De Gendt, M. Heyns, and G. Groeseneken, "A study of relaxation current in high-k dielectric stacks," IEEE Trans. Electron Dev., vol. 51, no. 3, pp. 402-408, Mar. 2004.
-
(2004)
IEEE Trans. Electron Dev.
, vol.51
, Issue.3
, pp. 402-408
-
-
Xu, Z.1
Pantisano, L.2
Kerber, A.3
Degraeve, R.4
Cartier, E.5
De Gendt, S.6
Heyns, M.7
Groeseneken, G.8
-
23
-
-
36049005249
-
Improved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrode
-
DOI 10.1143/JJAP.46.7300
-
C.-H. Cheng, K.-C. Chiang, H.-C. Pan, C.-N. Hsiao, C.-P. Chou, S. P. Mcalister, and A. Chin, "Improved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrode," Jpn. J. Appl. Phys., vol. 46, no. 11, pp. 7300-7302, Nov. 2007. (Pubitemid 350080944)
-
(2007)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.46
, Issue.11
, pp. 7300-7302
-
-
Cheng, C.-H.1
Chiang, K.-C.2
Pan, H.-C.3
Hsiao, C.-N.4
Chou, C.-P.5
Mcalister, S.P.6
Chin, A.7
-
24
-
-
0042665519
-
MIM capacitance variation under electrical stress
-
Aug.
-
C. Besset, S. Bruyere, S. Blonkowski, S. Cremer, and E. Vincent, "MIM capacitance variation under electrical stress," Microelectron. Rel., vol. 43, no. 8, pp. 1237-1240, Aug. 2003.
-
(2003)
Microelectron. Rel.
, vol.43
, Issue.8
, pp. 1237-1240
-
-
Besset, C.1
Bruyere, S.2
Blonkowski, S.3
Cremer, S.4
Vincent, E.5
|