Modeling the negative quadratic VCC of SiO2 in MIM capacitor

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1671-1673

  Phung, Thanh Hoa ^a   Steinmann, Philipp ^b   Wise, Rick ^b   Yeo, Yee Chia ^a   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

MIM capacitor; Negative quadratic VCC; Orientation polarization; SiO2; Voltage coefficients of capacitance (VCC)

Indexed keywords

CAPACITANCE DENSITY; ELECTRICAL PERFORMANCE; EQUATION BASED; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; NEGATIVE QUADRATIC VCC; POST-DEPOSITION ANNEAL; SIO2; VOLTAGE COEFFICIENT OF CAPACITANCES; VOLTAGE COEFFICIENTS OF CAPACITANCE (VCC);

CAPACITANCE; CAPACITORS; METAL INSULATOR BOUNDARIES; POLARIZATION; SILICON COMPOUNDS;

MIM DEVICES;

EID: 81855183828     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2169038     Document Type: Article

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