High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applications

Journal of the Electrochemical Society

Volumn 158, Issue 12, 2011, Pages

  Phung, Thanh Hoa ^a   Srinivasan, Dharani Kumar ^a   Steinmann, Philipp ^b   Wise, Rick ^b   Yu, Ming Bin ^c   Yeo, Yee Chia ^a   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TEXAS INSTRUMENTS   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE DENSITY; DIELECTRIC FIELD STRENGTHS; FIELD STRENGTHS; HIGH QUALITY; HIGH-CAPACITANCE DENSITY; LOW-LEAKAGE CURRENT; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; RF APPLICATIONS; STACKED DIELECTRICS;

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ERBIUM; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; SILICON COMPOUNDS;

MIM DEVICES;

EID: 81355163396     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.085112jes     Document Type: Article

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