-
1
-
-
36648998773
-
Improved high-temperature leakage in highdensity MIM capacitors by using a TiLaO dielectric and an Ir electrode
-
Dec.
-
C. H. Cheng, H. C. Pan, H. J. Yang, C. N. Hsiao, C. P. Chou, S. P. McAlister, and A. Chin, "Improved high-temperature leakage in highdensity MIM capacitors by using a TiLaO dielectric and an Ir electrode," IEEE Electron Device Lett., vol. 28, no. 12, pp. 1095-1097, Dec. 2007.
-
(2007)
IEEE Electron Device Lett.
, vol.28
, Issue.12
, pp. 1095-1097
-
-
Cheng, C.H.1
Pan, H.C.2
Yang, H.J.3
Hsiao, C.N.4
Chou, C.P.5
McAlister, S.P.6
Chin, A.7
-
2
-
-
34547770804
-
Use of a highwork-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors
-
Aug.
-
K. C. Chiang, C. H. Cheng, K. Y. Jhou, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, A. Chin, and H. L. Hwang, "Use of a highwork-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors," IEEE Electron Device Lett., vol. 28, no. 8, pp. 694-696, Aug. 2007.
-
(2007)
IEEE Electron Device Lett.
, vol.28
, Issue.8
, pp. 694-696
-
-
Chiang, K.C.1
Cheng, C.H.2
Jhou, K.Y.3
Pan, H.C.4
Hsiao, C.N.5
Chou, C.P.6
McAlister, S.P.7
Chin, A.8
Hwang, H.L.9
-
3
-
-
79960907710
-
3 as insulator
-
Aug.
-
3 as insulator," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1107-1109, Aug. 2011.
-
(2011)
IEEE Electron Device Lett.
, vol.32
, Issue.8
, pp. 1107-1109
-
-
Wu, Y.H.1
Lin, C.C.2
Hu, Y.C.3
Wu, M.L.4
Wu, J.R.5
Chen, L.L.6
-
4
-
-
4544353246
-
Engineering of voltage nonlinearity in high-κ MIM capacitor for analog/mixed-signal ICs
-
S. J. Kim, B. J. Cho, M. F. Li, S. J. Ding, M. B. Yu, C. Zhu, A. Chin, and D. L. Kwong, "Engineering of voltage nonlinearity in high-κ MIM capacitor for analog/mixed-signal ICs," in VLSI Symp. Tech. Dig., 2004, pp. 218-219.
-
(2004)
VLSI Symp. Tech. Dig.
, pp. 218-219
-
-
Kim, S.J.1
Cho, B.J.2
Li, M.F.3
Ding, S.J.4
Yu, M.B.5
Zhu, C.6
Chin, A.7
Kwong, D.L.8
-
5
-
-
70449592146
-
2 laminated dielectrics for analog circuit applications
-
Nov.
-
2 laminated dielectrics for analog circuit applications," IEEE Trans. Electron Devices, vol. 56, no. 11, pp. 2683-2691, Nov. 2009.
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, Issue.11
, pp. 2683-2691
-
-
Chen, J.D.1
Yang, J.J.2
Wise, R.3
Steinmann, P.4
Yu, M.B.5
Zhu, C.6
Yeo, Y.C.7
-
6
-
-
81355163396
-
2 for RF applications
-
Nov.
-
2 for RF applications," J. Electrochem. Soc., vol. 158, no. 12, pp. H1289-H1292, Nov. 2011.
-
(2011)
J. Electrochem. Soc.
, vol.158
, Issue.12
-
-
Phung, T.H.1
Srinivasan, D.K.2
Steinmann, P.3
Wise, R.4
Yu, M.B.5
Yeo, Y.C.6
Zhu, C.7
-
7
-
-
84655163951
-
2 stack featuring high capacitance density and low voltage coefficient
-
Jan.
-
2 stack featuring high capacitance density and low voltage coefficient," IEEE Electron Device Lett., vol. 33, no. 1, pp. 104-106, Jan. 2012.
-
(2012)
IEEE Electron Device Lett.
, vol.33
, Issue.1
, pp. 104-106
-
-
Wu, Y.H.1
Ou, W.Y.2
Lin, C.C.3
Wu, J.R.4
Wu, M.L.5
Chen, L.L.6
-
8
-
-
77955161627
-
3 stacked dielectric
-
Aug.
-
3 stacked dielectric," IEEE Electron Device Lett., vol. 31, no. 8, pp. 875-877, Aug. 2010.
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.8
, pp. 875-877
-
-
Tsui, B.Y.1
Hsu, H.H.2
Cheng, C.H.3
-
9
-
-
78651335881
-
2 dielectric
-
Jan.
-
2 dielectric," Appl. Phys. Lett., vol. 98, no. 1, pp. 013506-013506-3, Jan. 2011.
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.1
, pp. 013506-0135063
-
-
Wu, Y.H.1
Lin, C.C.2
Chen, L.L.3
Hu, Y.C.4
Wu, J.R.5
Wu, M.L.6
-
10
-
-
77950169035
-
High performance metal/ insulator/metal capacitors using HfTiO as dielectric
-
H. H. Hsu, C. H. Cheng, and B. Y. Tsui, "High performance metal/ insulator/metal capacitors using HfTiO as dielectric," in Proc. Int. Symp. VLSI Technol., Syst., Appl., 2009, pp. 67-68.
-
(2009)
Proc. Int. Symp. VLSI Technol., Syst., Appl.
, pp. 67-68
-
-
Hsu, H.H.1
Cheng, C.H.2
Tsui, B.Y.3
-
11
-
-
0037084710
-
Phonons and lattice dielectric properties of zirconia
-
Feb.
-
X. Zhao and D. Vanderbilt, "Phonons and lattice dielectric properties of zirconia," Phys. Rev. B, Condens. Matter, vol. 65, no. 7, pp. 075105-1-075105-10, Feb. 2002.
-
(2002)
Phys. Rev. B, Condens. Matter
, vol.65
, Issue.7
, pp. 0751051-07510510
-
-
Zhao, X.1
Vanderbilt, D.2
-
12
-
-
34047246671
-
Modeling of nonlinearities in the capacitance-voltage characteristics of high-κ metal-insulator-metal capacitors
-
Apr.
-
P. Gonon and C. Vallee, "Modeling of nonlinearities in the capacitance-voltage characteristics of high-κ metal-insulator-metal capacitors," Appl. Phys. Lett., vol. 90, no. 14, pp. 142906-1-142906-3, Apr. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.90
, Issue.14
, pp. 1429061-1429063
-
-
Gonon, P.1
Vallee, C.2
-
13
-
-
81855183828
-
2 in MIM capacitor
-
Dec.
-
2 in MIM capacitor," IEEE Electron Device Lett., vol. 32, no. 12, pp. 1671-1673, Dec. 2011.
-
(2011)
IEEE Electron Device Lett.
, vol.32
, Issue.12
, pp. 1671-1673
-
-
Phung, T.H.1
Steinmann, P.2
Wise, R.3
Yeo, Y.C.4
Zhu, C.5
-
14
-
-
41649120939
-
2-HfTiOy laminate stack
-
Mar.
-
2-HfTiOy laminate stack," Appl. Phys. Lett., vol. 92, no. 13, pp. 132902-1-132902-3, Mar. 2008.
-
(2008)
Appl. Phys. Lett.
, vol.92
, Issue.13
, pp. 1329021-1329023
-
-
Mikhelashvili, V.1
Thangadurai, P.2
Kaplan, W.D.3
Eisenstein, G.4
-
15
-
-
0035872897
-
High-κ gate dielectrics: Current status and materials properties considerations
-
May
-
G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-κ gate dielectrics: Current status and materials properties considerations," J. Appl. Phys., vol. 89, no. 10, pp. 5243-5275, May 2001.
-
(2001)
J. Appl. Phys.
, vol.89
, Issue.10
, pp. 5243-5275
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
16
-
-
72049109441
-
3 MIM capacitors by using plasma treatment after dielectric formation
-
Oct.
-
3 MIM capacitors by using plasma treatment after dielectric formation," IEEE Electron Device Lett., vol. 30, no. 10, pp. 1033-1035, Oct. 2009.
-
(2009)
IEEE Electron Device Lett.
, vol.30
, Issue.10
, pp. 1033-1035
-
-
Yang, J.J.1
Chen, J.D.2
Wise, R.3
Steinmann, P.4
Yeo, Y.C.5
Zhu, C.6
-
17
-
-
28344433409
-
2 capacitors treated by N2-plasma
-
Sep.
-
2 capacitors treated by N2-plasma," Appl. Phys. Lett., vol. 87, no. 13, pp. 132903-1-132903-3, Sep. 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, Issue.13
, pp. 1329031-1329033
-
-
Seong, N.J.1
Yoona, S.G.2
Yeom, S.J.3
Woo, H.K.4
Kil, D.S.5
Roh, J.S.6
Sohn, H.C.7
|