Improved stress reliability of analog metal-insulator-metal capacitors using TiO2ZrO2 dielectrics

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1287-1289

  Lin, S H ^a   Chiang, K C ^a   Yeh, F S ^a   Chin, Albert ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

High k; Metal insulator metal (MIM); Reliability; TiO 2; ZrO2

Indexed keywords

CAPACITANCE VARIATION; HIGH DENSITY; HIGH K; METAL INSULATOR METALS; METAL-INSULATOR-METAL CAPACITORS; TIO; VOLTAGE STRESS;

CAPACITANCE; CAPACITORS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM COMPOUNDS; TITANIUM NITRIDE; ZIRCONIUM ALLOYS;

RELIABILITY;

EID: 70549110006     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034113     Document Type: Article

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