MIM capacitors with crystalline-TiO 2/SiO 2 stack featuring high capacitance density and low voltage coefficient

IEEE Electron Device Letters

Volumn 33, Issue 1, 2012, Pages 104-106

  Wu, Yung Hsien ^a   Ou, Wei Yuan ^a   Lin, Chia Chun ^a   Wu, Jia Rong ^a   Wu, Min Lin ^a   Chen, Lun Lun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Conduction mechanism; crystalline TiO 2 SiO 2 stack; leakage current; metal insulator metal (MIM) capacitors; quadratic voltage coefficient of capacitance (VCC )

Indexed keywords

CAPACITANCE DENSITY; CONDUCTION MECHANISM; CRYSTALLINE-TIO 2/SIO 2 STACK; HIGH PERMITTIVITY; HIGH-CAPACITANCE DENSITY; LOW VOLTAGES; METAL-INSULATOR-METAL (MIM) CAPACITORS; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; PLASMA TREATMENT; STACKED DIELECTRICS; TIO; VOLTAGE COEFFICIENT OF CAPACITANCES;

CAPACITANCE; CAPACITORS; CRYSTALLINE MATERIALS; LEAKAGE (FLUID); LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; METALS; PLASMA APPLICATIONS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON COMPOUNDS; TITANIUM DIOXIDE;

MIM DEVICES;

EID: 84655163951     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2173791     Document Type: Article

References (22)

1. Y. H. Wu, C. C. Lin, L. L. Chen, Y. C. Hu, J. R. Wu, and M. L. Wu, "High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric," Appl. Phys. Lett., vol. 98, no. 1, pp. 013 506-1-013 506-3, Jan. 2011.
2. Y. H. Wu,C.C. Lin,Y.C.Hu, M. L. Wu, J.R.Wu, and L. L.Chen, "Highperformance metal-insulator-metal capacitor using stacked TiO2/Y2O3 as insulator," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1107-1109, Aug. 2011.
3. Y. H. Wu, B. Y. Chen, L. L. Chen, J. R. Wu, and M. L. Wu, "Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film," Appl. Phys. Lett., vol. 95, no. 11, pp. 113 502-1-113 502-3, Sep. 2009.
4. C. H. Cheng, S. H. Lin, K. Y. Jhou, W. J. Chen, C. P. Chou, F. S. Yeh, J. Hu, M. Hwang, T. Arikado, S. P. McAlister, and A. Chin, "High density and low leakage current in TiO2 MIM capacitors processed at 300 °C," IEEE Electron Device Lett., vol. 29, no. 8, pp. 845-847, Aug. 2008.
5. S. H. Lin, K. C. Chiang, F. S. Yeh, and A. Chin, "Improved stress reliability of analog metal-insulator-metal capacitors using TiO2/ZrO2 dielectrics," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1287-1289, Dec. 2009.
6. D. Brassard, L. Ouellet, and M. A. E. Khakani, "Room-temperature deposited titanium silicate thin films for MIM capacitor applications," IEEE Electron Device Lett., vol. 28, no. 4, pp. 261-263, Apr. 2007.
7. Y. H. Jeong, J. B. Lim, S. Nahm, H. J. Sun, and H. J. Lee, "High-performance metal-insulator-metal capacitors using amorphous BaSm2Ti4O12 thin film," IEEE Electron Device Lett., vol. 28, no. 1, pp. 17-20, Jan. 2007. (Pubitemid 46043857)
8. S. J. Kim, B. J. Cho, M. F. Li, S. J. Ding, M. B. Yu, C. Zhu, A. Chin, and D.-L. Kwong, "Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-signal ICs," in VLSI Symp. Tech. Dig., 2004, pp. 218-219.
9. 2 dielectric stack," IEEE Electron Device Lett., vol. 30, no. 5, pp. 460-462, May 2009.
10. 3 stacked dielectric," IEEE Electron Device Lett., vol. 31, no. 8, pp. 875-877, Aug. 2010.
11. Y. H.Wu, C. K. Kao, B. Y. Chen, Y. S. Lin, M. Y. Li, and H. C.Wu, "High density metal-insulator-metal capacitor based on ZrO2/Al2O3/ZrO2 laminate dielectric," Appl. Phys. Lett., vol. 93, no. 3, pp. 033 511-1-033 511-3, Jul. 2008.
12. 2 dielectrics," Appl. Phys. Lett., vol. 85, no. 4, pp. 672-674, Jul. 2004.
13. 2 films," Microelectron. Eng., vol. 88, no. 7, pp. 1272-1275, Jul. 2011.
14. E. P. Gusev, V. Narayanan, and M. M. Frank, "Advanced high-κ dielectric stacks with poly Si and metal gates: Recent progress and current challenges," IBM J. Res. Develop., vol. 50, no. 4.5, pp. 387-410, Jul. 2006. (Pubitemid 44375469)
15. C. B. Kaynak, M. Lukosius, I. Costina, B. Tillack, C. Wenger, G. Ruhl, and S. Rushworth, "Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitor," Microelectron. Eng., vol. 87, no. 12, pp. 2561-2564, Dec. 2010.
16. S. Mondal and T. M. Pan, "High-performance Ni/Lu2O3/TaN metal/insulator/metal capacitors," IEEE Electron Device Lett., vol. 32, no. 11, pp. 1576-1578, Nov. 2011.
17. 2 by nitrogen," J. Appl. Phys., vol. 99, no. 4, pp. 044 105-1-044 105-4, Feb. 2006.
18. 3 stack as high-κ gate dielectric for Si-based MOS devices," IEEE Electron Device Lett., vol. 31, no. 9, pp. 1014-1016, Sep. 2010.
19. Y. H. Wu, L. L. Chen, W. C. Chen, C. C. Lin, M. L. Wu, and J. R.Wu, "MOS devices with tetragonal ZrO2 as gate dielectric formed by annealing ZrO2/Ge/ZrO2 laminate," Microelectron. Eng., vol. 88, no. 7, pp. 1361-1364, Jul. 2011.
20. 2 MIM capacitors: A unified understanding and prediction," in IEDM Tech. Dig., 2003, pp. 36.35.1-36.35.4.
21. K. F. Albertin and I. Pereyra, "Study of metal-oxide-semiconductor capacitors with R.F. magnetron sputtering TiOxNy films dielectric layer," Phys. Stat. Sol., vol. 7, no. 3/4, pp. 937-940, Apr. 2010.
22. Y. H. Wu, C. C. Lin, L. L. Chen, B. Y. Chen, M. L. Wu, and J. R. Wu, "Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO4 film," Appl. Phys. Lett., vol. 96, no. 13, pp. 133 501-1-133 501-3, Mar. 2010.