High-performance metal-insulator-metal capacitor using stacked TiO 2Y2O3 as Insulator

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1107-1109

  Wu, Yung Hsien ^a   Lin, Chia Chun ^a   Hu, Yao Chung ^a   Wu, Min Lin ^a   Wu, Jia Rong ^a   Chen, Lun Lun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Amorphous high ; leakage current; metal insulator metal (MIM) capacitors; TiO2Y 2O3 stack; voltage coefficient of capacitance (VCC)

Indexed keywords

AMORPHOUS TIO; BAND OFFSETS; CAPACITANCE DENSITY; FREQUENCY DISPERSION; HIGH THERMAL STABILITY; HIGH-CAPACITANCE DENSITY; LOW-LEAKAGE CURRENT; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; PROCESS TEMPERATURE; TIO; VOLTAGE COEFFICIENT OF CAPACITANCE (VCC); VOLTAGE COEFFICIENT OF CAPACITANCES;

AMORPHOUS FILMS; CAPACITANCE; CAPACITORS; CRYSTALLIZATION; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; METALS; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM DIOXIDE;

MIM DEVICES;

EID: 79960907710     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2151171     Document Type: Article

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