High-performance Ni23TaN metal-insulator-metal capacitors

IEEE Electron Device Letters

Volumn 32, Issue 11, 2011, Pages 1576-1578

  Mondal, Somnath ^a   Pan, Tung Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Lu2O3; Metal insulator metal (MIM); Ni; Reliability; TaN

Indexed keywords

CARRIER INJECTION; HIGH-CAPACITANCE DENSITY; LOW-LEAKAGE CURRENT; METAL INSULATOR METALS; METAL-INSULATOR-METAL CAPACITORS; TAN; VOLTAGE COEFFICIENT OF CAPACITANCES;

CAPACITANCE; CAPACITORS; METAL INSULATOR BOUNDARIES; METALS; RELIABILITY; SEMICONDUCTOR INSULATOR BOUNDARIES; TANTALUM COMPOUNDS;

MIM DEVICES;

EID: 80055015762     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2163611     Document Type: Article

References (14)

1. K. C. Chiang, C. H. Cheng, H. C. Pan, C. N. Hsiao, C. P. Chou, A. Chin, and H. L. Hwang, "High-temperature leakage improvement in metal-insulator-metal capacitors by workfunction tuning," IEEE Electron Device Lett., vol.-28, no. 3, pp. 235-237, Mar. 2007.
2. K. C. Chiang, C. C. Huang, A. Chin, G. L. Chen, W. J. Chen, Y. H. Wu, A. Chin, and S. P. McAlister, "High performance SrTiO3 metal-insulator-metal capacitors for analog applications," IEEE Trans. Electron Devices, vol.-53, no. 9, pp. 2312-2319, Sep. 2006.
3. C. H. Ng, K. W. Chew, and S. F. Chu, "Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors," IEEE Electron Device Lett., vol.-24, no. 8, pp. 506-508, Aug. 2003.
4. 2 laminate dielectric," Appl. Phys. Lett., vol. 93, no. 3, pp. 033 511, Jul. 2008.
5. 2/TiN MIM capacitors using laser-annealing technique," IEEE Electron Device Lett., vol.-31, no. 7, pp. 749-751, Jul. 2010.
6. 3 MIM capacitors by using plasma treatment after dielectric formation," IEEE Electron Device Lett., vol.-30, no. 10, pp. 1033-1035, Oct. 2009.
7. 5/Cu MIM structure for SoC applications featuring a single-mask add-on process," in IEDM Tech. Dig.,-2002, pp. 940-942.
8. 2 dielectrics," IEEE Electron Device Lett., vol.-24, no. 2, pp. 63-65, Feb. 2003.
9. 3 and AlTiOx dielectrics," IEEE Electron Device Lett., vol.-23, no. 4, pp. 185-187, Apr. 2002. (Pubitemid 34514975)
10. Y. L. Tu, H. L. Lin, L. L. Chao, D. Wu, C. S. Tsai, C. Wang, C. F. Huang, C. H. Lin, and J. Sun, "Characterization and comparison of high-k metal-insulator-metal (MIM) capacitors in-0.13 μmCu BEOL for mixed-mode and RF applications," in VLSI Symp. Tech. Dig., 2003, pp. 79-80.
11. J. H. Lee, Y. C. Lin, and B. H. Chen, "A new cost-effective metal-insulator-metal capacitor processed at 350 ?C using Ni2Si fully silicided amorphous silicon electrodes," IEEE Trans. Electron Devices, vol. 58, no. 3, pp. 672-676, Mar. 2011.
12. 3," Appl. Phys. Lett., vol. 85, no. 4, pp. 630-632, Jul. 2004.
13. 3," Appl. Phys. Lett., vol. 95, no. 2, pp. 022 903, Jul. 2009.
14. 3 laminate MIM capacitors for Si RF IC applications," IEEE Trans. Electron Devices, vol.-51, no. 6, pp. 886-894, Jun. 2004.