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Electrochemical and Solid-State Letters

Volumn 13, Issue 1, 2009, Pages

Characteristics of cerium oxide for metal-insulator-metal capacitors

(5) Cheng, C H a Hsu, H H b Chen, W B b Chin, Albert b Yeh, F S a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG PERFORMANCE; CERIUM OXIDES; COMBINED EFFECT; LOW VOLTAGES; LOW-LEAKAGE CURRENT; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS;

CAPACITANCE; CAPACITORS; CERIUM; CERIUM COMPOUNDS; DIELECTRIC MATERIALS; HAFNIUM; METAL INSULATOR BOUNDARIES; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; TANTALUM COMPOUNDS;

METALS;

EID: 70450200549 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3258042 Document Type: Article

Times cited : (15)

References (23)

1
- 0035339020
- Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
- DOI 10.1109/55.919238, PII S0741310601037004
- J. A. Babcock, S. G. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh, IEEE Electron Device Lett., 22, 230 (2001). 10.1109/55.919238 (Pubitemid 32486882)
- (2001) IEEE Electron Device Letters , vol.22 , Issue.5 , pp. 230-232
- Babcock, J.A.¹ Balster, S.G.² Pinto, A.³ Dirnecker, C.⁴ Steinmann, P.⁵ Jumpertz, R.⁶ El-Kareh, B.⁷

2
- 0042888789
- 10.1109/LED.2003.815154
- C. H. Ng, K. W. Chew, and S. F. Chu, IEEE Electron Device Lett., 24, 506 (2003). 10.1109/LED.2003.815154
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 506
- Ng, C.H.¹ Chew, K.W.² Chu, S.F.³

3
- 0036540809
- x dielectrics
- DOI 10.1109/55.992833, PII S0741310602032093
- S. B. Chen, J. H. Lai, A. Chin, J. C. Hsieh, and J. Liu, IEEE Electron Device Lett., 23, 185 (2002). 10.1109/55.992833 (Pubitemid 34514975)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.4 , pp. 185-187
- Chen, S.B.¹ Lai, C.H.² Chin, A.³ Hsieh, J.C.⁴ Liu, J.⁵

4
- 0036539415
- 3 gate dielectrics from IF to RF frequency range
- DOI 10.1109/55.992839, PII S0741310602032044
- S. B. Chen, J. H. Lai, K. T. Chan, A. Chin, J. C. Hsieh, and J. Liu, IEEE Electron Device Lett., 23, 203 (2002). 10.1109/55.992839 (Pubitemid 34514976)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.4 , pp. 203-205
- Chen, S.B.¹ Lai, C.H.² Chan, K.T.³ Chin, A.⁴ Hsieh, J.C.⁵ Liu, J.⁶ Chou, J.H.⁷

5
- 0036923873
- T. Ishikawa, D. Kodama, Y. Matsui, M. Hiratani, T. Furusawa, and D. Hisamoto, Tech. Dig.-Int. Electron Devices Meet., 2002, 940.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2002 , pp. 940
- Ishikawa, T.¹ Kodama, D.² Matsui, Y.³ Hiratani, M.⁴ Furusawa, T.⁵ Hisamoto, D.⁶

6
- 0037718406
- 10.1109/LED.2002.808159
- X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong, P. D. Foo, and M. B. Yu, IEEE Electron Device Lett., 24, 63 (2003). 10.1109/LED.2002.808159
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 63
- Yu, X.¹ Zhu, C.² Hu, H.³ Chin, A.⁴ Li, M.F.⁵ Cho, B.J.⁶ Kwong, D.-L.⁷ Foo, P.D.⁸ Yu, M.B.⁹

7
- 17644439382
- H. Hu, S. J. Ding, H. F. Lim, C. Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, B. J. Cho, Tech. Dig.-Int. Electron Devices Meet., 2003, 379.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 379
- Hu, H.¹ Ding, S.J.² Lim, H.F.³ Zhu, C.⁴ Li, M.F.⁵ Kim, S.J.⁶ Yu, X.F.⁷ Chen, J.H.⁸ Yong, Y.F.⁹ Cho, B.J.¹⁰

8
- 0141538337
- S. J. Kim, B. J. Cho, M.-F. Li, C. Zhu, A. Chin, and D. L. Kwong, Dig. Tech. Pap.-Symp. VLSI Technol., 2003, 77.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2003 , pp. 77
- Kim, S.J.¹ Cho, B.J.² Li, M.-F.³ Zhu, C.⁴ Chin, A.⁵ Kwong, D.L.⁶

9
- 33745156470
- S. J. Kim, B. J. Cho, M. B. Yu, M.-F. Li, Y.-Z. Xiong, C. Zhu, A. Chin, and D. L. Kwong, Dig. Tech. Pap.-Symp. VLSI Technol., 2005, 56.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2005 , pp. 56
- Kim, S.J.¹ Cho, B.J.² Yu, M.B.³ Li, M.-F.⁴ Xiong, Y.-Z.⁵ Zhu, C.⁶ Chin, A.⁷ Kwong, D.L.⁸

10
- 27144453436
- K. C. Chiang, A. Chin, C. H. Lai, W. J. Chen, C. F. Cheng, B. F. Hung, and C. C. Liao, Dig. Tech. Pap.-Symp. VLSI Technol., 2005, 62.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2005 , pp. 62
- Chiang, K.C.¹ Chin, A.² Lai, C.H.³ Chen, W.J.⁴ Cheng, C.F.⁵ Hung, B.F.⁶ Liao, C.C.⁷

11
- 27144496148
- 2) RF MIM capacitors using high-κ TaTiO as the dielectric
- DOI 10.1109/LED.2005.856708
- K. C. Chiang, C. H. Lai, A. Chin, T. J. Wang, H. F. Chiu, J. R. Chen, S. P. McAlister, and C. C. Chi, IEEE Electron Device Lett., 26, 728 (2005). 10.1109/LED.2005.856708 (Pubitemid 41488885)
- (2005) IEEE Electron Device Letters , vol.26 , Issue.10 , pp. 728-730
- Chiang, K.C.¹ Lai, C.H.² Chin, A.³ Wang, T.J.⁴ Chiu, H.F.⁵ Chen, J.-R.⁶ McAlister, S.P.⁷ Chi, C.C.⁸

12
- 61349094351
- K. C. Chiang, C. C. Huang, A. Chin, W. J. Chen, H. L. Kao, M. Hong, and J. Kwo, Dig. Tech. Pap.-Symp. VLSI Technol., 2006, 126.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2006 , pp. 126
- Chiang, K.C.¹ Huang, C.C.² Chin, A.³ Chen, W.J.⁴ Kao, H.L.⁵ Hong, M.⁶ Kwo, J.⁷

13
- 10944272655
- 2 gate dielectrics
- DOI 10.1149/1.1819855, 3
- J. C. Wang, K. C. Chiang, T. F. Lei, and C. L. Lee, Electrochem. Solid-State Lett., 7, E55 (2004). 10.1149/1.1819855 (Pubitemid 40015887)
- (2004) Electrochemical and Solid-State Letters , vol.7 , Issue.12
- Wang, J.C.¹ Chiang, K.C.² Lei, T.F.³ Lee, C.L.⁴

14
- 33846975485
- Thermal leakage improvement by using a high-work-function Ni electrode in high-κ TiHfO metal-insulator-metal capacitors
- DOI 10.1149/1.2422874
- K. C. Chiang, C. C. Huang, H. C. Pan, C. N. Hsiao, C. H. Cheng, C. P. Chou, W. J. Chen, A. Chin, and S. P. McAlister, J. Electrochem. Soc., 154, G54 (2007). 10.1149/1.2422874 (Pubitemid 46246071)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.3
- Chiang, K.C.¹ Huang, C.C.² Pan, H.C.³ Hsiao, C.N.⁴ Lin, J.W.⁵ Hsieh, I.J.⁶ Cheng, C.H.⁷ Chou, C.P.⁸ Chin, A.⁹ Hwang, H.L.¹⁰ McAlister, S.P.¹¹

15
- 36648998773
- Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode
- DOI 10.1109/LED.2007.909612
- C. H. Cheng, H. C. Pan, H. J. Yang, C. N. Hsiao, C. P. Chou, S. P. McAlister, and A. Chin, IEEE Electron Device Lett., 28, 1095 (2007). 10.1109/LED.2007.909612 (Pubitemid 350192888)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.12 , pp. 1095-1097
- Cheng, C.H.¹ Pan, H.C.² Yang, H.J.³ Hsiao, C.N.⁴ Chou, C.P.⁵ McAlister, S.P.⁶ Chin, A.⁷

16
- 55049137194
- 10.1149/1.2993977
- C. H. Cheng, H. C. Pan, S. H. Lin, H. H. Hsu, C. N. Hisao, C. P. Chou, F. S. Yeh, and A. Chin, J. Electrochem. Soc., 155, G295 (2008). 10.1149/1.2993977
- (2008) J. Electrochem. Soc. , vol.155 , pp. 295
- Cheng, C.H.¹ Pan, H.C.² Lin, S.H.³ Hsu, H.H.⁴ Hisao, C.N.⁵ Chou, C.P.⁶ Yeh, F.S.⁷ Chin, A.⁸

17
- 14844312074
- in, IEEE,.
- J. C. Wang, K. C. Chiang, T. F. Lei, and C. L. Lee, in Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IEEE, p. 161 (2004).
- (2004) Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits , pp. 161
- Wang, J.C.¹ Chiang, K.C.² Lei, T.F.³ Lee, C.L.⁴

18
- 0033904734
- 10.1143/JJAP.39.166
- K. Morito, T. Suzuki, S. Sekiguchi, H. O. Okushi, and M. Fujimoto, Jpn. J. Appl. Phys., Part 1, 39, 166 (2000). 10.1143/JJAP.39.166
- (2000) Jpn. J. Appl. Phys., Part 1 , vol.39 , pp. 166
- Morito, K.¹ Suzuki, T.² Sekiguchi, S.³ Okushi, H.O.⁴ Fujimoto, M.⁵

19
- 19944392278
- y dielectrics
- DOI 10.1016/j.mee.2005.04.018, PII S0167931705001565, 14th Biennial Conference on Insulating Films on Semiconductors
- Ch. Wenger, R. Sorge, T. Schroeder, A. U. Mane, G. Lippert, G. Lupina, J. Dabrowski, P. Zaumseil, and H. J. Muessig, Microelectron. Eng., 80, 313 (2005). 10.1016/j.mee.2005.04.018 (Pubitemid 40753102)
- (2005) Microelectronic Engineering , vol.80 , Issue.SUPPL. , pp. 313-316
- Wenger, Ch.¹ Sorge, R.² Schroeder, T.³ Mane, A.U.⁴ Lippert, G.⁵ Lupina, G.⁶ Dabrowski, J.⁷ Zaumseil, P.⁸ Muessig, H.-J.⁹

20
- 34047246671
- Modeling of nonlinearities in the capacitance-voltage characteristics of high- k metal-insulator-metal capacitors
- DOI 10.1063/1.2719618
- P. Gonon and C. Valĺe, Appl. Phys. Lett., 90, 142906 (2007). 10.1063/1.2719618 (Pubitemid 46550125)
- (2007) Applied Physics Letters , vol.90 , Issue.14 , pp. 142906
- Gonon, P.¹ Vallae, C.²

21
- 51849105994
- 10.1063/1.2973687
- B. Miao, R. Mahapatra, N. Wright, and A. Horsfall, J. Appl. Phys., 104, 054510 (2008). 10.1063/1.2973687
- (2008) J. Appl. Phys. , vol.104 , pp. 054510
- Miao, B.¹ Mahapatra, R.² Wright, N.³ Horsfall, A.⁴

22
- 19944415293
- 2 high K gate oxide
- DOI 10.1016/j.mee.2005.04.098, PII S0167931705002376, 14th Biennial Conference on Insulating Films on Semiconductors
- K. Xiong and J. Robertson, Microelectron. Eng., 80, 408 (2005). 10.1016/j.mee.2005.04.098 (Pubitemid 40753120)
- (2005) Microelectronic Engineering , vol.80 , Issue.SUPPL. , pp. 408-411
- Xiong, K.¹ Robertson, J.²

23
- 0031212337
- 10.1016/S0040-6090(97)00081-3
- S. Kanakaraju, S. Mohan, and A. K. Sood, Thin Solid Films, 305, 191 (1997). 10.1016/S0040-6090(97)00081-3
- (1997) Thin Solid Films , vol.305 , pp. 191
- Kanakaraju, S.¹ Mohan, S.² Sood, A.K.³

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