Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2683-2691

  Chen, Jing De ^a   Yang, Jian Jun ^a   Wise, Rick ^b   Steinmann, Philipp ^b   Yu, Ming Bin ^c   Zhu, Chunxiang ^a   Yeo, Yee Chia ^a,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TEXAS INSTRUMENTS   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d AGENCY FOR SCIENCE   (Singapore)

Author keywords

Canceling effect; Capacitor; Metal insulator metal (MIM); SiO2; Sm2O3

Indexed keywords

CANCELING EFFECT; CAPACITANCE DENSITY; DIELECTRIC CONSTANTS; HIGH-CAPACITANCE DENSITY; HIGHER FREQUENCIES; METAL-INSULATOR-METAL (MIM); METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; PHYSICAL CHARACTERIZATION; POOLE-FRENKEL EMISSION; POSITIVE BIAS; SIO2; SM2O3; VOLTAGE COEFFICIENT OF CAPACITANCES;

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC NETWORK ANALYSIS; HAFNIUM COMPOUNDS; LAMINATING; METAL INSULATOR BOUNDARIES; METALS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON COMPOUNDS; SOLID-STATE SENSORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

MIM DEVICES;

EID: 70449592146     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030539     Document Type: Article

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