Impact of TiN plasma post-treatment on alumina electron trapping

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 2, 2007, Pages 242-250

  Bajolet, Aurelie ^a   Bruyere, Sylvie ^a   Proust, Marina ^a   Montès, Laurent ^b   Ghibaudo, Gerard ^b  

^a STMICROELECTRONICS   (France)

^b CNRS   (France)

Author keywords

Alumina; Chemical vapor deposition for TiN (CVD TiN); Di maria method; Electron trapping; Metal insulator metal (MIM) devices; Plasma post treatment (PT); Trench capacitors

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRON TRAPS; MIM DEVICES; PHYSICAL VAPOR DEPOSITION; PLASMA APPLICATIONS;

DI MARIA METHOD; ELECTRODE DEPOSITION; PLASMA POST-TREATMENT (PT); TRENCH CAPACITORS;

TITANIUM NITRIDE;

EID: 34548238103     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.901084     Document Type: Conference Paper

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