Gate-controlled spin-orbit interaction in InAs high-electron mobility transistor layers epitaxially transferred onto Si substrates

ACS Nano

Volumn 7, Issue 10, 2013, Pages 9106-9114

  Kim, Kyung Ho ^a   Um, Doo Seung ^b   Lee, Hochan ^b   Lim, Seongdong ^b   Chang, Joonyeon ^a   Koo, Hyun Cheol ^a,d   Oh, Min Wook ^c   Ko, Hyunhyub ^b   Kim, Hyung Jun ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Ulsan National Institute of Science and Technology   (South Korea)

^c Korea Electrotechnology Research Institute (KERI)   (South Korea)

^d Korea University   (South Korea)

Author keywords

epitaxial transfer; high electron mobility transistor; selective wet etching; spin field effect transistor; spin orbit interaction

Indexed keywords

EPITAXIAL TRANSFER; FIRST-PRINCIPLES CALCULATION; HIGH ELECTRON MOBILITY; MULTI-LAYERED STRUCTURE; SELECTIVE WET ETCHING; SPIN FIELD-EFFECT TRANSISTORS; SPIN ORBIT INTERACTIONS; TECHNOLOGICAL PLATFORM;

CALCULATIONS; ELECTRIC FIELDS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); QUALITY CONTROL; SILICON; SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84886996629     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn403715p     Document Type: Article

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