High performance extremely thin body InGaAs-on-Insulator metal-oxide-semiconductor field-effect transistors on Si substrates with Ni-InGaAs metal source/drain

Applied Physics Express

Volumn 4, Issue 11, 2011, Pages

  Kim, Sang Hyeon ^a   Yokoyama, Masafumi ^a   Taoka, Noriyuki ^a   Iida, Ryo ^a   Lee, Sunghoon ^a   Nakane, Ryosho ^a   Urabe, Yuji ^b   Miyata, Noriyuki ^b   Yasuda, Tetsuji ^b   Yamada, Hisashi ^c   Fukuhara, Noboru ^c   Hata, Masahiko ^c   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL THICKNESS; DOPING CONCENTRATION; HIGH MOBILITY; METAL SOURCE/DRAIN; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; SI SUBSTRATES; THIN BODY;

DIELECTRIC DEVICES; METALS; MOSFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TRANSISTORS; VANADIUM;

SEMICONDUCTING SILICON;

EID: 81055154934     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.114201     Document Type: Article

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