Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's

IEEE Electron Device Letters

Volumn 20, Issue 11, 1999, Pages 551-553

  Hwang, K C ^a   Chao, P C ^a   Creamer, C ^a   Nichols, K B ^a   Wang, S ^a   Tu, D ^a   Kong, W ^a   Dugas, D ^a   Patton, G ^a  

^a LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSCONDUCTANCE;

GATE-DRAIN BREAKDOWN VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033221295     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.798040     Document Type: Article

References (11)

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