Spin-orbit coupling in double-sided doped InAs quantum well structures

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  Kim, Kyung Ho ^a   Kim, Hyung Jun ^a   Koo, Hyun Cheol ^a   Chang, Joonyeon ^a   Han, Suk Hee ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SUPPLY LAYERS; DOPING CONCENTRATION; INAS QUANTUM WELL; POSITIVE POTENTIAL; RASHBA SPIN ORBIT INTERACTION; SPIN-ORBIT COUPLINGS;

DOPING (ADDITIVES); ELECTRIC FIELDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SPIN DYNAMICS;

FIELD EFFECT TRANSISTORS;

EID: 77954706273     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462325     Document Type: Article

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