Control of spin precession in a spin-injected field effect transistor

Science

Volumn 325, Issue 5947, 2009, Pages 1515-1518

  Koo, Hyun Cheol ^a   Kwon, Jae Hyun ^a   Eom, Jonghwa ^a,b   Chang, Joonyeon ^a   Han, Suk Hee ^a   Johnson, Mark ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b Sejong University   (South Korea)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIAL;

ELECTRIC FIELD; ELECTRON SPIN RESONANCE; ELECTRONIC EQUIPMENT; MAGNETIC FIELD; PARTICLE MOTION; POLARIZATION; RESEARCH WORK;

ACCELERATION; ANISOTROPY; ARTICLE; CONTROLLED STUDY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRICITY; ELECTRODE; ELECTRON; ELECTRONICS; FIELD EFFECT TRANSISTOR; INFORMATION PROCESSING; MAGNETIC FIELD; OSCILLATION; POLARIZATION; PRIORITY JOURNAL; SEMICONDUCTOR; SIGNAL NOISE RATIO;

EID: 70349318655     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1173667     Document Type: Article

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