Band bending at the surfaces of In-rich InGaN alloys

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Bailey, L R ^a   Veal, T D ^a   King, P D C ^a   McConville, C F ^a   Pereiro, J ^b   Grandal, J ^b   Sanchez Garcia M A ^b   Muoz, E ^b   Calleja, E ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b Polytechnic University of Madrid   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BENDING (DEFORMATION); CARRIER CONCENTRATION; INFRARED SPECTROSCOPY; METALLIC COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; POISSON EQUATION; RANGE FINDING;

COMPOSITION RANGES; CONCENTRATION PROFILES; INFRARED REFLECTIONS; INGAN ALLOYS; OPTICAL ABSORPTION SPECTROSCOPIES; SHEET CHARGE DENSITIES; SURFACE ELECTRONS;

CERIUM ALLOYS;

EID: 58149264852     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3033373     Document Type: Article

References (46)

1. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, J. Appl. Phys. 0021-8979 10.1063/1.1605815 94, 4457 (2003).
2. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 0021-8979 10.1063/1.1600519 94, 3675 (2003).
3. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 0003-6951 10.1063/1.1489481 80, 4741 (2002).
4. W. Walukiewicz, J. W. Ager III, K. M. Yu, Z. Liliental-Weber, J. Wu, S. X. Li, R. E. Jones, and J. D. Denlinger, J. Phys. D 0022-3727 10.1088/0022-3727/39/5/R01 39, R83 (2006).
5. F. A. Ponce and D. P. Bour, Nature (London) 0028-0836 10.1038/386351a0 386, 351 (1997).
6. V. M. Polyakov and F. Schwierz, Appl. Phys. Lett. 0003-6951 10.1063/1.2166195 88, 032101 (2006).
7. Z. Liliental-Weber, R. E. Jones, H. C. M. van Genuchten, K. M. Yu, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Physica B 401-402, 646 (2007). 0921-4526
8. T. D. Veal, P. H. Jefferson, L. F. J. Piper, C. F. McConville, T. B. Joyce, P. R. Chalker, L. Considine, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 0003-6951 10.1063/1.2387976 89, 202110 (2006).
9. P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. B 0163-1829 10.1103/PhysRevB.75.115312 75, 115312 (2007).
10. I. Mahboob, T. D. Veal, L. F. J. Piper, C. F. McConville, H. Lu, W. J. Schaff, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 0163-1829 10.1103/PhysRevB.69.201307 69, 201307 (R) (2004).
11. I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.036804 92, 036804 (2004).
12. P. D. C. King, T. D. Veal, H. Lu, P. H. Jefferson, S. A. Hatfield, W. J. Schaff, and C. F. McConville, Phys. Status Solidi B 0370-1972 10.1002/pssb.200778452 245, 881 (2008).
13. H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, Appl. Phys. Lett. 0003-6951 10.1063/1.1562340 82, 1736 (2003).
14. M. Noguchi, K. Hirakawa, and T. Ikoma, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.66.2243 66, 2243 (1991).
15. P. D. C. King, T. D. Veal, P. H. Jefferson, S. A. Hatfield, L. F. J. Piper, C. F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, H. Lu, and W. J. Schaff, Phys. Rev. B 0163-1829 10.1103/PhysRevB.77.045316 77, 045316 (2008).
16. L. F. J. Piper, T. D. Veal, M. J. Lowe, and C. F. McConville, Phys. Rev. B 0163-1829 10.1103/PhysRevB.73.195321 73, 195321 (2006).
17. T. Ohashi, Y. Saito, T. Maruyama, and Y. Nanishi, J. Cryst. Growth 237-239, 1022 (2002). 0022-0248
18. L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Status Solidi C 3, 1841 (2006). 1610-1634
19. L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, H. Lu, and W. J. Schaff, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1927108 23, 617 (2005).
20. L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 0003-6951 10.1063/1.2214156 88, 252109 (2006).
21. V. M. Bermudez, T. M. Jung, K. Doverspike, and A. E. Wickenden, J. Appl. Phys. 0021-8979 10.1063/1.360917 79, 110 (1996).
22. V. M. Bermudez, J. Appl. Phys. 0021-8979 10.1063/1.362924 80, 1190 (1996).
23. R. A. Beach, E. C. Piquette, and T. C. McGill, MRS Internet J. Nitride Semicond. Res. 4S1, G6.26 (1999). 0021-8979
24. P. D. C. King, T. D. Veal, C. F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schörmann, D. J. As, K. Lischka, D. Muto, H. Naoi, Y. Nanishi, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 0003-6951 10.1063/1.2775807 91, 092101 (2007).
25. S. A. Chambers, T. Droubay, T. C. Kaspar, and M. Gutowski, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1768525 22, 2205 (2004).
26. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1975).
27. H. C. Casey, Jr. and F. Stern, J. Appl. Phys. 0021-8979 10.1063/1.322626 47, 631 (1976).
28. P. Schley, R. Goldhahn, A. T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, H. Lu, W. J. Schaff, M. Kurouchi, Y. Nanishi, M. Rakel, C. Cobet, and N. Esser, Phys. Rev. B 0163-1829 10.1103/PhysRevB.75.205204 75, 205204 (2007).
29. B. R. Nag, Phys. Status Solidi B 0370-1972 10.1002/pssb.200301823 237, R1 (2003).
30. L. F. J. Piper, T. D. Veal, I. Mahboob, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.115333 70, 115333 (2004).
31. M. Schubert, T. E. Tiwald, and C. M. Herzinger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.61.8187 61, 8187 (2000).
32. G. Yu, N. L. Rowell, and D. J. Lockwood, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1752891 22, 1110 (2004).
33. C. Pickering, J. Phys. C 0022-3719 13, 2959 (1980).
34. T. Abe and T. Kato, Jpn. J. Appl. Phys. 0021-4922 10.1143/JJAP.4.742 4, 742 (1965).
35. H. Lüth, Phys. Status Solidi A 0031-8965 10.1002/1521-396X(200109) 187:1<33::AID-PSSA33>3.0.CO;2-9 187, 33 (2001).
36. T. U. Kampen and W. Mönch, Appl. Surf. Sci. 117-118, 388 (1997). 0169-4332
37. W. Mönch, J. Appl. Phys. 0021-8979 10.1063/1.363486 80, 5076 (1996).
38. S. H. Wei and A. Zunger, Appl. Phys. Lett. 0003-6951 10.1063/1.117689 69, 2719 (1996).
39. P. D. C. King, T. D. Veal, C. E. Kendrick, L. R. Bailey, S. M. Durbin, and C. F. McConville, Phys. Rev. B 0163-1829 10.1103/PhysRevB.78.033308 78, 033308 (2008).
40. W. Mönch, Semiconductor Surfaces and Interfaces, 3rd ed. (Springer, Berlin, 2001).
41. H. Übensee, G. Paasch, and J. -P. Zöllner, Phys. Rev. B 0163-1829 10.1103/PhysRevB.39.1955 39, 1955 (1989).
42. J. P. Zöllner, H. Übensee, G. Paasch, T. Fiedler, and G. Gobsch, Phys. Status Solidi B 0370-1972 10.1002/pssb.2221340245 134, 837 (1986).
43. T. D. Veal, L. F. J. Piper, W. J. Schaff, and C. F. McConville, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2005.12.100 288, 268 (2006).
44. T. D. Veal, L. F. J. Piper, M. R. Phillips, M. H. Zareie, H. Lu, W. J. Schaff, and C. F. McConville, Phys. Status Solidi A 0031-8965 10.1002/pssa.200673226 204, 536 (2007).
45. T. Inushima, M. Higashiwaki, and T. Matsui, Phys. Rev. B 0163-1829 10.1103/PhysRevB.68.235204 68, 235204 (2003).
46. W. Walukiewicz, R. E. Jones, S. X. Li, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro. 2005.12.082 288, 278 (2006).