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Volumn 99, Issue 10, 2011, Pages

PN junction rectification in electrolyte gated Mg-doped InN

(10) Alarcon Llado E a,b Mayer, M A a,c Boudouris, B W a,d Segalman, R A a,d Miller, N a,c Yamaguchi, T e Wang, K e Nanishi, Y e,f Haller, E E a,c Ager, J W a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b EPFL (Switzerland)

c University of California Berkeley (United States)

d UNIVERSITY OF CALIFORNIA (United States)

e RITSUMEIKAN UNIVERSITY (Japan)

f Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT FLOWS; CURRENT VOLTAGE; GATE VOLTAGES; I - V CURVE; INDIUM NITRIDE; MG-DOPED; N-P-N STRUCTURE; NEGATIVE GATE VOLTAGES; P-N JUNCTION; P-TYPE; SURFACE ACCUMULATION; SURFACE ELECTRON; THIN-FILM STRUCTURE; TOP CONTACT;

NITRIDES;

ELECTROLYTES;

EID: 80052816734 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3634049 Document Type: Article

Times cited : (19)

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