A plasma-treated chalcogenide switch device for stackable scalable 3d nanoscale memory

Nature Communications

Volumn 4, Issue , 2013, Pages

  Lee, Myoung Jae ^a   Lee, Dongsoo ^a   Cho, Seong Ho ^a   Hur, Ji Hyun ^a   Lee, Sang Moon ^a,b   Seo, David H ^a   Kim, Dong Sik ^c   Yang, Moon Seung ^a   Lee, Sunghun ^a   Hwang, Euichul ^a   Uddin, Mohammad Rakib ^a   Kim, Hojung ^a   Chung, U In ^a   Park, Youngsoo ^a   Yoo, In Kyeong ^a  

^a SAMSUNG Electronics   (South Korea)

^b Seoul National University   (South Korea)

^c Inha Technical College   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS; NANOMATERIAL; NITROGEN DERIVATIVE; SILICON DERIVATIVE; TANTALUM; TELLURIUM;

DIFFUSION; MEASUREMENT METHOD; PLASMA; TEMPERATURE EFFECT; THRESHOLD; VOLATILE SUBSTANCE;

ARTICLE; CHALCOGENIDE SWITCH DEVICE; CHEMICAL REACTION; COMPUTER MEMORY; CROSS LINKING; CRYSTALLIZATION; DEGRADATION; DENSITY; DIFFUSION; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRICAL EQUIPMENT; ELECTRODE; ELECTRON BEAM; MASS SPECTROMETRY; NITROGEN DEPOSITION; PLASMA; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TEMPERATURE; TEMPERATURE MEASUREMENT; THERMOSTABILITY; TRANSMISSION ELECTRON MICROSCOPY; VELOCITY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84886037881     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3629     Document Type: Article

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