Varistor-type bidirectional switch (J MAX>10 7A/cm 2, selectivity∼10 4) for 3D bipolar resistive memory arrays

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 37-38

  Lee, Wootae ^a   Park, Jubong ^a   Shin, Jungho ^a   Woo, Jiyong ^a   Kim, Seonghyun ^a   Choi, Godeuni ^a   Jung, Seungjae ^a   Park, Sangsu ^a   Lee, Daeseok ^a   Cha, Euijun ^a   Lee, Hyung Dong ^b   Kim, Soo Gil ^b   Chung, Suock ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIDIRECTIONAL SWITCH; HIGH CURRENT DENSITIES; HIGH SELECTIVITY; IV CHARACTERISTICS; RESISTIVE MEMORIES; TIO; TUNNEL BARRIER; ULTRAHIGH DENSITY;

THREE DIMENSIONAL COMPUTER GRAPHICS; TITANIUM DIOXIDE;

VARISTORS;

EID: 84866533785     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242449     Document Type: Conference Paper

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