Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Applied Physics Letters

Volumn 100, Issue 12, 2012, Pages

  Ho Lee, Jong ^a   Hwan Kim, Gun ^a   Bae Ahn, Young ^a   Woon Park, Ji ^a   Wook Ryu, Seung ^b   Seong Hwang, Cheol ^a   Joon Kim, Hyeong ^a  

^a Seoul National University   (South Korea)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAJOR FACTORS; MEMORY LAYERS; OFF-STATE CURRENT; RESISTANCE SWITCHING; RESISTIVE MEMORIES; THRESHOLD SWITCHING; TIO; UNIPOLAR SWITCHING;

SILICON; THIN FILMS; TITANIUM DIOXIDE;

SWITCHING;

EID: 84859530403     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3696077     Document Type: Article

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