Threshold and filament current densities in chalcogenide-based switches and phase-change-memory devices

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 814-816

  Kostylev, Sergey A ^a  

^a Onyx International Consulting LLC   (United States)

Author keywords

Chalcogenide alloy; Electronic filament; Phasechange memory (PCM)

Indexed keywords

BOTTOM CONTACTS; CHALCOGENIDE ALLOY; CONSTANT THRESHOLD; DEAD-SPACE; DIFFERENTIAL CONDUCTIVITY; ELECTRONIC FILAMENT; FILAMENT CURRENT; INTERELECTRODE DISTANCE; MEMORY DEVICE; NEGATIVE DIFFERENTIAL CONDUCTIVITIES; PHASE CHANGES; PHASE-CHANGE MEMORIES; PHASECHANGE MEMORY (PCM); RING CONTACTS;

COMPUTER PROGRAMMING; ELECTRIC FIELDS; ELECTRIC SWITCHGEAR; FILAMENTS (LAMP); PULSE CODE MODULATION; SWITCHING THEORY;

PHASE CHANGE MEMORY;

EID: 68249143296     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2024965     Document Type: Article

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