SCOPUS 정보 검색 플랫폼

AIP Advances

Volumn 3, Issue 9, 2013, Pages

Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes

(3) Kumar, Mohit a Kanjilal, Aloke b Som, Tapobrata a

a INSTITUTE OF PHYSICS (India)

b SHIV NADAR UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; FILM THICKNESS; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; OPTICAL FILMS; OXIDE MINERALS; SEMICONDUCTOR DIODES; ZINC OXIDE;

BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE MEASUREMENT; DIODE CHARACTERISTICS; FILM STRESS; HETEROJUNCTION DIODES; ON POTENTIALS; TRAP DENSITY;

GRAIN BOUNDARIES;

EID: 84885649599 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4823480 Document Type: Article

Times cited : (42)

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