A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering

Journal of Alloys and Compounds

Volumn 581, Issue , 2013, Pages 28-34

  He, Bo ^a   Wang, Hong Zhi ^a   Li, Yao Gang ^a   Ma, Zhong Quan ^b   Xu, Jing ^b   Zhang, Qing Hong ^a   Wang, Chun Rui ^a   Xing, Huai Zhong ^a   Zhao, Lei ^b   Rui, Yi Chuan ^a  

^a DONGHUA UNIVERSITY   (China)

^b SHANGHAI UNIVERSITY   (China)

Author keywords

Al doped ZnO (AZO); Current voltage (I V) characteristics; Indium tin oxide (ITO); Magnetron sputtering; SIS heterojunction

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MAGNETRON SPUTTERING; OPTICAL FILMS; PHOTOCURRENTS; SILICA; SILICON; SILICON OXIDES; SPUTTERING; TEMPERATURE; THERMOOXIDATION; TIN OXIDES; ULTRATHIN FILMS;

AL-DOPED ZNO; ANTIREFLECTION FILMS; HALL EFFECT MEASUREMENT; INDIUM TIN OXIDE; OPTICAL AND ELECTRICAL PROPERTIES; RF SPUTTERING DEPOSITION; ULTRATHIN SILICON DIOXIDE; UV-VIS SPECTROPHOTOMETERS;

HETEROJUNCTIONS;

EID: 84884270603     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.06.144     Document Type: Article

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