Formation mechanism of preferential c-axis oriented ZnO thin films grown on p-Si substrates

Journal of Materials Science

Volumn 39, Issue 10, 2004, Pages 3525-3528

  Lee, H S ^a   Lee, J Y ^a   Kim, T W ^b   Kim, D W ^c   Cho, W J ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanyang University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ETCHING; FILM GROWTH; FREE ENERGY; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; SEMICONDUCTING SILICON; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

DEIONIZED WATER; ELECTRON TRANSPARENCY; RADIO FREQUENCY MAGNETRON SPUTTERING; RANDOM ROTATIONAL ORIENTATIONS;

POLYCRYSTALLINE MATERIALS;

EID: 3543049052     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JMSC.0000026968.24617.f6     Document Type: Article

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