Correlation between the microstructure and electroluminescence properties of Er-doped metal-oxide semiconductor structures

Applied Physics Letters

Volumn 94, Issue 10, 2009, Pages

  Kanjilal, A ^a   Rebohle, L ^a   Skorupa, W ^a   Helm, M ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; ERBIUM; LIGHT; OXYGEN; QUENCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; STRUCTURAL METALS;

ELECTROLUMINESCENCE PROPERTIES; ER-DOPED; LUMINESCENCE PROPERTIES; METAL-OXIDE-SEMICONDUCTOR STRUCTURES; MICROSCOPIC LEVELS; OPTICAL RESPONSE; OXYGEN DEFICIENCIES; POST-IMPLANTATION ANNEALING; RE-CLUSTERING; ROOM TEMPERATURES; SHORT WAVELENGTHS; SI-BASED;

LIGHT EMISSION;

EID: 62549138804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3098474     Document Type: Article

References (16)

1. L. Rebohle, J. von Borany, R. A. Yankov, W. Skorupa, I. E. Tyschenko, H. Fröb, and K. Leo, Appl. Phys. Lett. 0003-6951 10.1063/1.120143 71, 2809 (1997).
2. L. Rebohle, J. Lehmann, S. Prucnal, A. Kanjilal, A. Nazarov, I. Tyagulskii, W. Skorupa, and M. Helm, Appl. Phys. Lett. 0003-6951 10.1063/1.2964176 93, 071908 (2008).
3. G. H. Dieke, Spectra and Energy Levels of Rare Earth Ions in Crystals (Interscience, New York, 1968), Chap.
4. A. Kanjilal, L. Rebohle, M. Voelskow, W. Skorupa, and M. Helm, J. Appl. Phys. 0021-8979 10.1063/1.3021414 104, 103522 (2008).
5. J. Lgsgaard, Phys. Rev. B 0163-1829 10.1103/PhysRevB.65.174114 65, 174114 (2002).
6. J. F. Zeigler, SRIM-2006.02 (http://www.srim.org).
7. B. Garrido, C. García, S. -Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, and R. Rizk, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76.245308 76, 245308 (2007).
8. J. Warga, R. Li, S. N. Basu, and L. Dal Negro, Appl. Phys. Lett. 0003-6951 10.1063/1.3003867 93, 151116 (2008).
9. L. Rebohle, J. von Borany, H. Fröb, and W. Skorupa, Appl. Phys. B 70, 131 (2000).
10. T. Hori, Gate Dielectrics and MOS ULSIs: Principle, Technologies, and Applications (Springer, Berlin, 1997).
11. CRC Handbook of Chemistry and Physics, 87th ed., edited by, D. R. Lide, (CRC, Boca Raton, 2006).
12. L. Pavesi and M. Ceschini, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48. 17625 48, 17625 (1993).
13. G. Franz, E. Pecora, F. Priolo, and F. Iacona, Appl. Phys. Lett. 0003-6951 10.1063/1.2734505 90, 183102 (2007).
14. A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, and T. Gebel, Appl. Phys. Lett. 0003-6951 10.1063/1.1872208 86, 151914 (2005).
15. G. Franz, D. Pacifici, V. Vinciguerra, F. Priolo, and F. Iacona, Appl. Phys. Lett. 0003-6951 10.1063/1.126286 76, 2167 (2000).
16. Y. Y. Zhu, R. Xu, S. Chen, Z. B. Fang, F. Xue, Y. L. Fan, X. J. Yang, and Z. M. Jiang, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.08.389 508, 86 (2006).