Cathodoluminescence studies of InGaN/GaN multiple quantum well structure grown by metal organic chemical vapor deposition

ECS Transactions

Volumn 53, Issue 2, 2013, Pages 31-38

  Li, Y ^a,b   Lu, F ^a   Ramos, F ^a   Stokes, E B ^b  

^a VEECO INSTRUMENTS INC   (United States)

^b UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); COMPOSITIONAL VARIATION; ELECTRON BEAM VOLTAGE; EMISSION WAVELENGTH; HIGHER EMISSION INTENSITY; LUMINESCENCE EFFICIENCIES; LUMINESCENCE PROPERTIES; MULTIPLE QUANTUM-WELL STRUCTURES;

CATHODOLUMINESCENCE; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; VAPORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84885639150     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05302.0031ecst     Document Type: Conference Paper

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