Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 3934-3939

  Henley, S J ^a   Cherns, D ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRON IRRADIATION; GALLIUM NITRIDE; OPTICAL RESOLVING POWER; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

THREADING DEFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037392773     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1559417     Document Type: Article

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