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Materials Letters

Volumn 48, Issue 5, 2001, Pages 263-268

Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD

(2) Kim, Hwa Mok a Kang, Tae Won a

a Dongguk University (South Korea)

Author keywords

Cathodoluminescence; In composition; InGaN; MOCVD; Nonradiative recombination center; Phase separation; Quantum well

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTICAL PROPERTIES; PHASE SEPARATION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; SURFACE ROUGHNESS;

CATHODOLUMINESCENCE SPECTROSCOPY; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; NONRADIATIVE RECOMBINATION CENTER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035312751 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/S0167-577X(00)00313-X Document Type: Article

Times cited : (2)

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