Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers

Materials Letters

Volumn 58, Issue 21, 2004, Pages 2614-2617

  Choi, Y S ^a   Park, J H ^a   Kim, S S ^a   Song, H J ^a   Lee, S H ^b   Jung, J J ^b   Lee, B T ^a  

^a Chonnam National University   (South Korea)

^b LG Innotek Co Ltd   (South Korea)

Author keywords

CL; Dislocations; GaN; PL

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

MAPPING IMAGES; MULTI-QUANTUM WELLS (MQW); NONRADIATIVE RECOMBINATION CENTERS;

GALLIUM NITRIDE;

EID: 3142674950     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2004.03.021     Document Type: Article

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