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Applied Physics Letters

Volumn 77, Issue 4, 2000, Pages 507-509

Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

(9) Nistor, L a Bender, H b Vantomme, A c Wu, M F c Van Landuyt, J d O'Donnell, K P e Martin, R e Jacobs, K f Moerman, I f

a NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

b IMEC (Belgium)

c UNIVERSITY OF LEUVEN (Belgium)

d UNIVERSITY OF ANTWERP (Belgium)

e UNIVERSITY OF STRATHCLYDE (United Kingdom)

f GHENT UNIVERSITY (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000640186 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.127026 Document Type: Article

Times cited : (56)

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