Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4776, Issue , 2002, Pages 105-113

  Cao, X A ^a   Topol, K ^b   Shadedipour Sandvik, F ^b   Teetsov, J ^a   Sandvik, P M ^a   LeBoeuf, S F ^a   Ebong, A ^a   Kretchmer, J ^a   Stokes, E B ^a   Arthur, S ^a   Kaloyeros, A E ^b   Walker, D ^a  

^a GE GLOBAL RESEARCH   (United States)

^b State University of New York   (United States)

Author keywords

Carrier recombination; GaN; Light emitting diodes; Tunneling

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC SPACE CHARGE; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; GALLIUM NITRIDE; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS;

BAND GAP; CARRIER RECOMBINATION; DEFECT ASSISTED TUNNELING; DISLOCATION BENDING; INDIUM GALLIUM NITRIDE; SCREW DISLOCATION;

LIGHT EMITTING DIODES;

EID: 0036983775     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.452581     Document Type: Conference Paper

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