Influence of threading dislocations on the properties of InGaN-based multiple quantum wells

Journal of Crystal Growth

Volumn 266, Issue 4, 2004, Pages 455-460

  Yu, H B ^a   Chen, H ^a   Li, Dongsheng ^a   Wang, J ^a   Xing, Z G ^a   Zheng, X H ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. High resolution X ray diffraction; A1. Photoluminescence; A3. Metalorganic chemical vapor deposition; A3. Multi quantum wells; B1. Nitride

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X-RAY DIFFRACTION; INGAN; NONRADIATIVE RECOMBINATION (NR); THREADING DISLOCATIONS (TD);

SEMICONDUCTOR QUANTUM WELLS;

EID: 2442590809     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.110     Document Type: Article

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