Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

Journal of Applied Physics

Volumn 114, Issue 13, 2013, Pages

  Zhang, Siyuan ^a   Holec, David ^b   Fu, Wai Yuen ^a   Humphreys, Colin J ^a   Moram, Michelle A ^a,c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF LEOBEN   (Austria)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM NITRIDE; COMPUTATION THEORY; CONDUCTION BANDS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; ENERGY GAP; FERROELECTRICITY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; SCANDIUM ALLOYS; SCANDIUM COMPOUNDS; SPINODAL DECOMPOSITION; WIDE BAND GAP SEMICONDUCTORS;

COMPUTATIONAL TIME; CONDUCTION-BAND MINIMUM; EXCHANGE-CORRELATION POTENTIAL; FERROELECTRIC PROPERTY; HYBRID FUNCTIONAL; IN-PLANE LATTICE PARAMETERS; ROCK SALT STRUCTURES; SPECIAL QUASI-RANDOM STRUCTURES;

GALLIUM ALLOYS;

EID: 84885465898     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824179     Document Type: Article

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