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Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

Structural properties of wurtzitelike ScGaN films grown by NH 3-molecular beam epitaxy

(8) Moram, M A a Zhang, Y a Joyce, T B b Holec, D c Chalker, P R b Mayrhofer, P H c Kappers, M J a Humphreys, C J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b UNIVERSITY OF LIVERPOOL (United Kingdom)

c UNIVERSITY OF LEOBEN (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FILM; COMPOSITIONAL SEGREGATION; DE-WETTING; GAN FILM; GAN GROWTH; HIGH RESOLUTION X RAY DIFFRACTION; LATTICE PARAMETERS; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; WURTZITES;

CORUNDUM; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; STACKING FAULTS; ZINC SULFIDE;

SCANDIUM;

EID: 72449123244 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3268466 Document Type: Article

Times cited : (28)

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